Manfred Dür

TL;DR: In this article, a full-band Monte Carlo simulation of the high-field electron transport in the ZnSphosphor layer of an alternating-current thin-film electroluminescent device is performed.

TL;DR: Using an ensemble Monte Carlo simulation, the results show that the intersubband decay of electrons from the first excited subband into the ground subband is limited by ionized impurity scattering during the photoexcitation process, and the interSubband Decay of electrons is nonexponential.

TL;DR: In this article, first principles calculations for the respective microscopic scattering rates of both electrons and holes in various wide band gap semiconductors were performed, and the impact ionization rates themselves were calculated directly from the electronic band structure derived from empirical pseudopotential calculations for cubic GaN, ZnS, and SrS.

TL;DR: In this paper, the impact ionization rate in ZnS is calculated using a nonlocal empirical pseudopotential band structure and compared to previous results using a local calculation, and simple fit formulas are presented.

TL;DR: In this article, the problem of intersubband relaxation in GaAs/GaAs quantum wells, where the energy separation of the two lowest subbands is smaller than the optical phonon energy, is considered.