M
Maria Jose Caturla
Researcher at University of Alicante
Publications - 42
Citations - 2912
Maria Jose Caturla is an academic researcher from University of Alicante. The author has contributed to research in topics: Kinetic Monte Carlo & Silicon. The author has an hindex of 23, co-authored 38 publications receiving 2721 citations. Previous affiliations of Maria Jose Caturla include Lawrence Livermore National Laboratory.
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Journal ArticleDOI
Defect production in collision cascades in elemental semiconductors and fcc metals
Kai Nordlund,Kai Nordlund,Mai Ghaly,Robert S Averback,Maria Jose Caturla,T. Diaz de la Rubia,J. Tarus +6 more
TL;DR: In this article, a comparative molecular dynamics simulation study of collision cascades in two elemental semiconductors and five fcc metals is performed to elucidate how different material characteristics affect primary defect production during ion irradiation.
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Multiscale modelling of plastic flow localization in irradiated materials
Tomas Diaz de la Rubia,Hussein M. Zbib,Tariq Khraishi,Brian D. Wirth,M. Victoria,Maria Jose Caturla +5 more
TL;DR: Three-dimensional multiscale simulations of irradiated metals are used to reveal the mechanisms underlying plastic flow localization in defect-free channels and observe dislocation pinning by irradiation-induced clusters of defects, subsequent unpinning as defects are absorbed by the dislocations, and cross-slip of the latter as the stress is increased.
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Comparative study of radiation damage accumulation in Cu and Fe
Maria Jose Caturla,Naoki Soneda,E Alonso,Brian D. Wirth,T. Diaz de la Rubia,José Manuel Perlado +5 more
TL;DR: In this article, the authors have simulated damage production and accumulation in fcc Cu and bcc Fe using 20 keV primary knock-on atoms (PKAs) at a homologous temperature of 0.25 of the melting point.
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Ion-beam processing of silicon at keV energies: A molecular-dynamics study.
TL;DR: The stability of the damage produced by heavy ions at different temperatures and the nature of the recrystallization mechanism are studied and the results provide a clear and consistent physical picture of damage production in silicon under ion bombardment.
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Atomistic Shock Hugoniot simulation of single-crystal copper
Eduardo M. Bringa,J. U. Cazamias,Paul Erhart,James S. Stolken,N. Tanushev,Brian D. Wirth,Robert E. Rudd,Maria Jose Caturla +7 more
TL;DR: In this article, a simulation of single-crystal copper was performed using nonequilibrium molecular dynamics with a realistic embedded atom potential, and the simulation results were in good agreement with new experimental data presented here.