Marko J. Tadjer

TL;DR: In this paper , a review of basic and transition metal conducting and semiconducting oxides is presented, with an emphasis on the crystal, electronic, and band structures of the oxides.

TL;DR: In this article, the authors studied the thermal transport across the interfaces of Ga2O3 exfoliated onto a single crystal diamond and found that the van der Waals bonded temperature was 17 −1.7/+2.0 MW/m2 K, which is comparable to the TBC of several physical-vapor-deposited metals on diamond.

TL;DR: This work demonstrated a heterostructure n-channel depletion-mode β-Ga2O3 junction field-effect transistor (JFET) through van der Waals bonding with an exfoliated p-WSe2 flake, enabling miniaturization of the integrated power electronic systems.

TL;DR: In this paper, β-gallium oxide (β-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-twodimensional materials with a dry transfer process, wherein nanothin flakes of β-Ga 2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET.