M
Marko J. Tadjer
Researcher at United States Naval Research Laboratory
Publications - 205
Citations - 7494
Marko J. Tadjer is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Diamond & Breakdown voltage. The author has an hindex of 32, co-authored 189 publications receiving 4808 citations. Previous affiliations of Marko J. Tadjer include Technical University of Madrid & University of Maryland, College Park.
Papers
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Journal ArticleDOI
Engineering the Spectral and Spatial Dispersion of Thermal Emission via Polariton–Phonon Strong Coupling
Guanyu Lu,Christopher R. Gubbin,J. Ryan Nolen,Thomas G. Folland,Thomas G. Folland,Marko J. Tadjer,Simone De Liberato,Joshua D. Caldwell +7 more
TL;DR: In this article, a three-mode strong coupling between propagating and localized surface phonon polaritons, with zone-folded longitudinal optic phonons within periodic arrays of 4H-SiC nanopillars, was employed for tuning the thermal emission frequency, line width, polarization, and spatial coherence.
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Ultraviolet detector based on graphene/SiC heterojunction
Travis J. Anderson,Karl D. Hobart,Jordan D. Greenlee,David I. Shahin,Andrew D. Koehler,Marko J. Tadjer,Eugene A. Imhoff,Rachael L. Myers-Ward,Aris Christou,Francis J. Kub +9 more
TL;DR: In this article, the authors presented a detector based on an epitaxial graphene/SiC heterojunction, exploiting the 2D nature of graphene to minimize absorption losses for high-efficiency sensing.
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Impact of Surface Passivation on the Dynamic ON-Resistance of Proton-Irradiated AlGaN/GaN HEMTs
Andrew D. Koehler,Travis J. Anderson,Marko J. Tadjer,Bradley D. Weaver,Jordan D. Greenlee,David I. Shahin,Karl D. Hobart,Francis J. Kub +7 more
TL;DR: In this article, the authors studied the radiation tolerance of AlGaN/GaN high-electron mobility transistors (HEMTs) with 2-MeV protons, up to a fluence of $6 \times 10−14$ H+/cm2 (about 200 times of typical Si MOSFET rating).
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Proton Radiation-Induced Void Formation in Ni/Au-Gated AlGaN/GaN HEMTs
Andrew D. Koehler,Petra Specht,Travis J. Anderson,Bradley D. Weaver,Jordan D. Greenlee,Marko J. Tadjer,Matthew Porter,Michael Wade,Oscar C. Dubon,Karl D. Hobart,Todd R. Weatherford,Francis J. Kub +11 more
TL;DR: In this article, a defect located at the edges of the Ni/Au Schottky gate in the proton-irradiated devices was found to be caused by diffusion of Ni through vacancy exchange.
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Vertical GaN Junction Barrier Schottky Diodes
Andrew D. Koehler,Travis J. Anderson,Marko J. Tadjer,Anindya Nath,Boris N. Feigelson,David I. Shahin,Karl D. Hobart,Francis J. Kub +7 more
TL;DR: In this article, the Schottky barrier was used to construct the vertical GaN junction barrier of the p-type grid of a 10 μm-thick unintentionally doped GaN homoepitaxial drift layer, grown by metal organic chemical vapor deposition (MOCVD).