M
Marko J. Tadjer
Researcher at United States Naval Research Laboratory
Publications - 205
Citations - 7494
Marko J. Tadjer is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Diamond & Breakdown voltage. The author has an hindex of 32, co-authored 189 publications receiving 4808 citations. Previous affiliations of Marko J. Tadjer include Technical University of Madrid & University of Maryland, College Park.
Papers
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Journal ArticleDOI
On the high curvature coefficient rectifying behavior of nanocrystalline diamond heterojunctions to 4H-SiC
Marko J. Tadjer,Tatyana Feygelson,Karl D. Hobart,Joshua D. Caldwell,Travis J. Anderson,James E. Butler,Charles R. Eddy,D. Kurt Gaskill,Kok Keong Lew,Brenda L. VanMil,Rachael L. Myers-Ward,Fritz J. Kub,Gregory Sollenberger,Leonard J. Brillson +13 more
TL;DR: In this article, B2H6-doped nanocrystalline diamond (NCD) to n− 4H-SiC was studied by electrical and cathodoluminescence (CL) methods.
Journal ArticleDOI
Vibrational Coupling to Epsilon-Near-Zero Waveguide Modes
Thomas G. Folland,Guanyu Lu,Autumn Bruncz,Autumn Bruncz,J. Ryan Nolen,Marko J. Tadjer,Joshua D. Caldwell +6 more
TL;DR: In this article, high aspect ratio gratings (up to 24.8 um height with greater than 5 µm pitch) of 4H-SiC with resonant modes that couple to transverse magnetic and transverse electric incident fields are presented.
Journal ArticleDOI
Thermal etching of nanocrystalline diamond films
David I. Shahin,Travis J. Anderson,Tatyana I. Feygelson,Bradford B. Pate,Virginia D. Wheeler,Jordan D. Greenlee,Jennifer K. Hite,Marko J. Tadjer,Aristos Christou,Karl D. Hobart +9 more
TL;DR: In this paper, a dry process for selective etching of nanocrystalline diamond thin films has been developed as an alternative to plasma etching, which relies on subjecting masked diamond films to a controlled oxygen atmosphere at temperatures of 700-800°C to controllably etch both vertically through the film and laterally underneath the mask.
Journal ArticleDOI
Two-step growth of β-Ga2O3 films on (100) diamond via low pressure chemical vapor deposition
Rezaul Karim,Zhaoying Chen,Zixuan Feng,Hsien-Lien Huang,Jared M. Johnson,Marko J. Tadjer,Jinwoo Hwang,Hongping Zhao +7 more
TL;DR: In this paper, low pressure chemical vapor deposition was used to grow β-Ga2O3 films on (100) oriented, single-crystalline diamond substrates to avoid the oxidation of the diamond surface at high temperatures.
Proceedings ArticleDOI
Degradation mechanisms of AlGaN/GaN HEMTs on sapphire, Si, and SiC substrates under proton irradiation
Andrew D. Koehler,Travis J. Anderson,Jennifer K. Hite,Bradley D. Weaver,Marko J. Tadjer,Michael A. Mastro,Jordan D. Greenlee,Petra Specht,Matthew Porter,Todd R. Weatherford,Karl D. Hobart,Fritz J. Kub +11 more
TL;DR: In this article, the degradation mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) grown on sapphire, Si, and SiC substrates, under 2 MeV proton irradiation are investigated.