M
Marko J. Tadjer
Researcher at United States Naval Research Laboratory
Publications - 205
Citations - 7494
Marko J. Tadjer is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Diamond & Breakdown voltage. The author has an hindex of 32, co-authored 189 publications receiving 4808 citations. Previous affiliations of Marko J. Tadjer include Technical University of Madrid & University of Maryland, College Park.
Papers
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Journal ArticleDOI
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
Yuhao Zhang,Zhihong Liu,Marko J. Tadjer,Min Sun,Daniel Piedra,Christopher Hatem,Travis J. Anderson,Lunet E. Luna,Anindya Nath,Andrew D. Koehler,Hironori Okumura,Jie Hu,Xu Zhang,Xiang Gao,Boris N. Feigelson,Karl D. Hobart,Tomas Palacios +16 more
TL;DR: In this article, the vertical GaN junction barrier Schottky (JBS) rectifiers fabricated with novel ion implantation techniques were shown to achieve specific differential ON-resistances of 1.5-2.5 cm2 and 7-9 cm2, respectively.
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Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
TL;DR: In this paper, the growth of ultrawide bandgap β-Ga2O3 thin films on c-plane sapphire substrates by low pressure chemical vapor deposition is demonstrated.
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Editors' Choice Communication—A (001) β-Ga2O3 MOSFET with +2.9 V Threshold Voltage and HfO2 Gate Dielectric
Marko J. Tadjer,Nadeemullah A. Mahadik,Virginia D. Wheeler,Evan R. Glaser,Laura B. Ruppalt,Andrew D. Koehler,Karl D. Hobart,Charles R. Eddy,Fritz J. Kub +8 more
TL;DR: In this paper, an MOS transistor fabricated on (001) β-Ga2O3 exfoliated from a commercial (−201) βGaO3 substrate was reported, and the maximum drain current of 11.1 mA/mm was measured, and a non-destructive breakdown was reached around 80 V in the off state.
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Structural, Optical, and Electrical Characterization of Monoclinic β-Ga 2 O 3 Grown by MOVPE on Sapphire Substrates
Marko J. Tadjer,Michael A. Mastro,Nadeemullah A. Mahadik,Marc Currie,Virginia D. Wheeler,Jaime A. Freitas,Jordan D. Greenlee,Jennifer K. Hite,Karl D. Hobart,Charles R. Eddy,Fritz J. Kub +10 more
TL;DR: In this article, the epitaxial growth of monoclinic β-Ga2O3 on a-plane and c-plane sapphire substrates by metalorganic vapor phase epitaxy (MOVPE) was reported.
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Reduced Self-Heating in AlGaN/GaN HEMTs Using Nanocrystalline Diamond Heat-Spreading Films
Marko J. Tadjer,Travis J. Anderson,Karl D. Hobart,Tatyana Feygelson,Joshua D. Caldwell,Charles R. Eddy,Fritz J. Kub,James E. Butler,Bradford B. Pate,J. Melngailis +9 more
TL;DR: Nanocrystalline diamond (NCD) thin films are deposited as a heat-spreading capping layer on AlGaN/GaN HEMT devices as mentioned in this paper, and the NCD-capped HEMTs exhibited approximately 20% lower device temperature from 0.5 to 9 W/mm dc power device operation.