Marko J. Tadjer

TL;DR: In this article, GaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures.

TL;DR: In this article, the n-type dopants, Ge and Sn, were implanted into bulk β-Ga2O3 at multiple energies (60, 100, 200 keV) and total doses of ∼1014 cm−2 and annealed at 1100 °C for 10-120

Abstract: A heterojunction between thin films of nanocrystalline diamond (NCD) and 4H-SiC has been developed. Undoped and B-doped NCDs were deposited on both n− and p− SiC epilayers. I-V measurements on p+ NCD∕n− SiC indicated Schottky rectifying behavior with a turn-on voltage of around 0.2V. The current increased over eight orders of magnitude with an ideality factor of 1.17 at 30°C. Ideal energy-band diagrams suggested a possible conduction mechanism for electron transport from the SiC conduction band to either the valence band or acceptor level of the NCD film. Applications as an UV semitransparent electrical contact to 4H-SiC are discussed.

TL;DR: Boron-doped p+ nanocrystalline diamond (NCD) films are implemented as heat spreading gate contacts to AlGaN/GaN high-electron-mobility transistors.