M
Marko J. Tadjer
Researcher at United States Naval Research Laboratory
Publications - 205
Citations - 7494
Marko J. Tadjer is an academic researcher from United States Naval Research Laboratory. The author has contributed to research in topics: Diamond & Breakdown voltage. The author has an hindex of 32, co-authored 189 publications receiving 4808 citations. Previous affiliations of Marko J. Tadjer include Technical University of Madrid & University of Maryland, College Park.
Papers
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Journal ArticleDOI
A Tri-Layer PECVD SiN Passivation Process for Improved AlGaN/GaN HEMT Performance
Marko J. Tadjer,Travis J. Anderson,Andrew D. Koehler,Charles R. Eddy,David I. Shahin,Karl D. Hobart,Fritz J. Kub +6 more
Journal ArticleDOI
Design of Ga2O3 modulation doped field effect transistors
TL;DR: In this paper, the design of β-Ga2O3-based modulation-doped field effect transistors is discussed with a focus on the role of self-heating and resultant modification of the electron mobility profile.
Journal ArticleDOI
Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
Nadeemullah A. Mahadik,Robert E. Stahlbush,Eugene A. Imhoff,Marko J. Tadjer,Gary E. Ruland,Chaffra A. Affouda +5 more
TL;DR: In this article, the effect of substrate annealing on BPD mitigation in the epilayers was investigated, and a 3x reduction in BPD density was observed for the 1950 °C/10min anneal.
Proceedings ArticleDOI
2.3 kV Field-Plated Vertical Ga 2 O 3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga 2 O 3 Field-Plated Schottky Barrier Diodes
TL;DR: This work has demonstrated rectifiers with a highest ever reported reverse breakdown voltage of 2300 V with a lightly doped 20 um epi Ga203 drift layer grown on n-type $\beta$ -Ga203 epistructures and rectifiers delivering> 1 A forward current with a reverse breakdown Voltage of 650 V on a 10 um Ga 203 drift layer sample.
Journal ArticleDOI
Demonstration of CuI as a P–N heterojunction to β-Ga2O3
James C. Gallagher,Andrew D. Koehler,Marko J. Tadjer,N. A. Mahadik,Travis J. Anderson,Sujan Budhathoki,Ka Ming Law,Adam J. Hauser,Karl D. Hobart,Francis J. Kub +9 more
TL;DR: In this article, vertical heterojunction p-CuI/n-Ga2O3 diodes were fabricated on commercial β-Ga 2O3 substrates using the reaction of epitaxially-sputtered Cu with natural I2 vapor at room temperature followed by either a high temperature I2 gas reaction or an I2 solution treatment to remove iodine vacancies.