Mary E. Vickers

TL;DR: In this paper, high-resolution TEM images acquired immediately after first irradiating a region of quantum well indicates no gross fluctuations of indium content in the InGaN alloy, during only a brief period of irradiation, inhomogeneous strain is introduced in the material due to electron beam damage.

TL;DR: The Curie temperature of micrometre-thick films of BaTiO(3) is increased to at least 330 °C, and the tetragonal-to-cubic structural transition temperature to beyond 800 °C is increased, by interspersing stiff, self-assembled vertical columns of Sm(2)O( 3) throughout the film thickness.

TL;DR: This work creates giant and reversible extrinsic magnetocaloric effects in epitaxial films of the ferromagnetic manganite La( 0.7)Ca(0.3)MnO(3) using strain-mediated feedback from BaTiO( 3) substrates near a first-order structural phase transition.

TL;DR: In this article, the ability of in situ SiN x interlayers to lower the density of threading dislocations (TDs) has been studied for the growth of c -plane (0, 0,0,1) GaN epilayers on sapphire by organometallic vapour-phase epitaxy (OMVPE).

TL;DR: In this paper, the indium content and the layer thicknesses in an InGaN epilayer and InGaNs/GaN quantum well structures were determined using high-resolution x-ray diffraction (XRD) using the (002) reflection.