M
Masaaki Ikeda
Researcher at Hiroshima University
Publications - 42
Citations - 2814
Masaaki Ikeda is an academic researcher from Hiroshima University. The author has contributed to research in topics: Organic semiconductor & Substituent. The author has an hindex of 18, co-authored 40 publications receiving 2639 citations.
Papers
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Journal ArticleDOI
Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors.
Hideaki Ebata,Takafumi Izawa,Eigo Miyazaki,Kazuo Takimiya,Masaaki Ikeda,Hirokazu Kuwabara,Tatsuto Yui +6 more
TL;DR: Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).
Journal ArticleDOI
Alkylated dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophenes (Cn-DNTTs): Organic semiconductors for high-performance thin-film transistors
Myeong Jin Kang,Iori Doi,Hiroki Mori,Eigo Miyazaki,Kazuo Takimiya,Masaaki Ikeda,Hirokazu Kuwabara +6 more
TL;DR: Among the many semiconducting materials evaluated in the TFT confi guration, pentacene is the best as it shows the highest fi eld-effect mobility ( > 3.0 cm 2 V − 1 s − 1 ).
Journal ArticleDOI
Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability.
Ute Zschieschang,Frederik Ante,Tatsuya Yamamoto,Kazuo Takimiya,Hirokazu Kuwabara,Masaaki Ikeda,Tsuyoshi Sekitani,Takao Someya,Klaus Kern,Klaus Kern,Hagen Klauk +10 more
TL;DR: Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported.
Journal ArticleDOI
Organic electronics on banknotes.
Ute Zschieschang,Tatsuya Yamamoto,Kazuo Takimiya,Hirokazu Kuwabara,Masaaki Ikeda,Tsuyoshi Sekitani,Takao Someya,Hagen Klauk +7 more
TL;DR: Organic transistors and circuits are fabricated directly on the surface of banknotes with a yield of 92% and have a field-effect mobility of about 0.2 cm2 V−1s−1.
Patent
Field-effect transistor
TL;DR: In this paper, a field effect transistor characterized by using a compound represented by the formula (1) below as a semiconductor material is defined, where X1 and X2 independently represent a sulfur atom, a selenium atom or a tellurium atom.