M
Matthias Brandli
Researcher at IBM
Publications - 34
Citations - 1025
Matthias Brandli is an academic researcher from IBM. The author has contributed to research in topics: CMOS & Switched capacitor. The author has an hindex of 15, co-authored 32 publications receiving 813 citations.
Papers
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Proceedings ArticleDOI
A 28-Gb/s 4-Tap FFE/15-Tap DFE Serial Link Transceiver in 32-nm SOI CMOS Technology
John F. Bulzacchelli,Christian Menolfi,Troy J. Beukema,Daniel W. Storaska,Juergen Hertle,David R. Hanson,Ping-Hsuan Hsieh,Sergey V. Rylov,D. Furrer,Daniele Gardellini,Andrea Prati,Thomas Morf,V. Sharma,R. Kelkar,Herschel A. Ainspan,William R. Kelly,L. R. Chieco,G. A. Ritter,J. A. Sorice,Jon D. Garlett,Robert Callan,Matthias Brandli,P. Buchmann,Marcel Kossel,Thomas Toifl,Daniel J. Friedman +25 more
TL;DR: This paper describes a 28Gb/s serial link transceiver featuring a source-series terminated (SST) driver topology with twice the speed of existing designs, a two-stage peaking amplifier with capacitively-coupled parallel input stages and active feedback, and a 15-tap DFE.
Proceedings ArticleDOI
4.7 A sub-ns response on-chip switched-capacitor DC-DC voltage regulator delivering 3.7W/mm 2 at 90% efficiency using deep-trench capacitors in 32nm SOI CMOS
Toke Meyer Andersen,Florian Krismer,Johann W. Kolar,Thomas Toifl,Christian Menolfi,Lukas Kull,Thomas Morf,Marcel Kossel,Matthias Brandli,Peter Buchmann,Pier Andrea Francese +10 more
TL;DR: On-chip switched-capacitor converters have gained increasing popularity for this application due to their ease of integration using only transistors and capacitors readily available in the chosen technologies.
Proceedings ArticleDOI
A 4.6W/mm 2 power density 86% efficiency on-chip switched capacitor DC-DC converter in 32 nm SOI CMOS
Toke Meyer Andersen,Florian Krismer,Johann W. Kolar,Thomas Toifl,Christian Menolfi,Lukas Kull,T. Morf,Marcel Kossel,Matthias Brandli,P. Buchmann,P. A. Francese +10 more
TL;DR: In this article, the design and implementation of on-chip switched capacitor converters in deep submicron technologies is described, and the measured performance of a 2 : 1 voltage conversion ratio switched capacitor converter implemented in 32nm SOI CMOS technology with 1.8V input voltage results in a power density of 4.6W/mm2 at 86% efficiency when operated at a switching frequency of 100MHz.
Proceedings Article
A 2.6 mW/Gbps 12.5 Gbps RX With 8-Tap Switched-Capacitor DFE in 32 nm CMOS
Thomas Toifl,Christian Menolfi,Michael Ruegg,Robert Reutemann,Daniel M. Dreps,Troy J. Beukema,Andrea Prati,Daniele Gardellini,Marcel Kossel,Peter Buchmann,Matthias Brandli,Pier Andrea Francese,Thomas Morf +12 more
TL;DR: It is shown that the transceiver power and the effect of high-frequency transmit jitter can be reduced by implementing a linear equalizer only on the receive side and avoiding a transmit feed-forward equalizer (TX-FFE).
Journal ArticleDOI
A 64-Gb/s 1.4-pJ/b NRZ Optical Receiver Data-Path in 14-nm CMOS FinFET
Ilter Ozkaya,Alessandro Cevrero,Pier Andrea Francese,Christian Menolfi,Thomas Morf,Matthias Brandli,Daniel M. Kuchta,Lukas Kull,Christian W. Baks,Jonathan E. Proesel,Marcel Kossel,Danny Luu,Benjamin G. Lee,Fuad E. Doany,Mounir Meghelli,Yusuf Leblebici,Thomas Toifl +16 more
TL;DR: A 64-Gb/s high-sensitivity non-return to zero receiver (RX) data-path is demonstrated in the 14-nm-bulk FinFET CMOS technology to achieve high sensitivity, which incorporates a transimpedance amplifier whose gain and bandwidth are co-optimized with a 1-tap decision feedback equalization (DFE).