Min Sup Choi

TL;DR: This work demonstrates field-effect transistors with MoS2 channels, hBN dielectric, and graphene gate electrodes, and takes advantage of the mechanical strength and flexibility of these materials to create flexible and transparent FETs that show unchanged performance up to 1.5% strain.

TL;DR: These non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two- dimensional materials.

TL;DR: The experimental study on Fermi level pinning of monolayer MoS2 and MoTe2 is reported by interpreting the thermionic emission results and it is found that Rc is exponentially proportional to SBH, and these processing parameters can be controlled sensitively upon chemical doping into the 2D materials.

TL;DR: This study suggests an effective way to form a lateral p-n junction by the h-BN hard masking technique and to improve the photoresponse of MoS2 by the chemical doping process.

TL;DR: In this article, the authors used contacts made from metal embedded in insulating hexagonal boron nitride and dry transferred onto 2D semiconductors to create high-quality 2D transistors.