M
Ming Li
Researcher at Samsung
Publications - 48
Citations - 1372
Ming Li is an academic researcher from Samsung. The author has contributed to research in topics: MOSFET & Nanowire. The author has an hindex of 21, co-authored 48 publications receiving 1336 citations.
Papers
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Patent
Semiconductor devices having a support structure for an active layer pattern and methods of forming the same
TL;DR: In this paper, a gate electrode is configured to provide a support structure for the active layer pattern, and the gate electrode may be a gate of a silicon on insulator (SOI) device formed on the semiconductor wafer.
Proceedings ArticleDOI
Fin width scaling criteria of body-tied FinFET in sub-50 nm regime
Hye-Jin Cho,Jeong Dong Choe,Ming Li,Jin Young Kim,Sung-Hoon Chung,Chang Woo Oh,Eun-Jung Yoon,Dong-Won Kim,Donggun Park,Kinam Kim +9 more
TL;DR: In this paper, the fabrication of body-tied FinFETs with various fin widths, fabricated on bulk Si instead of SOI wafer, was introduced, and a new gate length/fin width (L/sub g/W/sub fin/) criterion was proposed to get nearly ideal subthreshold swing and drain induced barrier lowering (DIBL).
Patent
Methods of fabricating fin field transistors
Chul Lee,Min-Sang Kim,Dong-gun Park,Choong-ho Lee,Chang-Woo Oh,Jae-Man Yoon,Dong-Won Kim,Jeong-Dong Choe,Ming Li,Hye-Jin Cho +9 more
TL;DR: A fin field effect transistor (FinFET) as discussed by the authors includes a substrate, a fin, a gate electrode, and a gate insulation layer, and source and drain regions in the fin are on and extend laterally along and vertically away from the substrate.
Journal ArticleDOI
$C$ – $V$ Characteristics in Undoped Gate-All-Around Nanowire FET Array
Rock-Hyun Baek,Chang-Ki Baek,Sanghyun Lee,Sung Dae Suk,Ming Li,Yun Young Yeoh,Kyoung Hwan Yeo,Dong-Won Kim,Jeong-Soo Lee,D.M. Kim,Yoon-Ha Jeong +10 more
TL;DR: In this paper, the gate response of the undoped and floating channel is investigated using C-V data, and the inversion charge and carrier mobility are accurately extracted by eliminating the effects of parasitic capacitances and series resistance Rsd.
Proceedings ArticleDOI
Fully working high performance multi-channel field effect transistor (McFET) SRAM cell on bulk Si substrate using TiN single metal gate
Sung-min Kim,Eun Jung Yoon,Min Sang Kim,Chang Woo Oh,Sung Dae Suk,Ming Li,Sung-young Lee,Kyoung Hwan Yeo,Sung Hwan Kim,Dong Uk Choe,Dong-Won Kim,Donggun Park,Kinam Kim,Byung-Il Ryu +13 more
TL;DR: In this paper, the authors demonstrate a single metal gate 65nm CMOS McFET (multichannel field effect transistor) SRAM cell transistor with high static noise margin (SNM) of 350mV at 1.0V.