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Chang Woo Oh
Researcher at Samsung
Publications - 42
Citations - 1077
Chang Woo Oh is an academic researcher from Samsung. The author has contributed to research in topics: MOSFET & Transistor. The author has an hindex of 16, co-authored 42 publications receiving 1058 citations.
Papers
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Proceedings ArticleDOI
High performance 5nm radius Twin Silicon Nanowire MOSFET (TSNWFET) : fabrication on bulk si wafer, characteristics, and reliability
Sung Dae Suk,Sung-young Lee,Sung-min Kim,Eun-Jung Yoon,Min-Sang Kim,Ming Li,Chang Woo Oh,Kyoung Hwan Yeo,Sung Hwan Kim,Dong-Suk Shin,Kwan-Heum Lee,Heungsik Park,Jeorig Nam Han,Choong-Hee Park,Jong-Bong Park,Dong-Won Kim,Donggun Park,Byung-Il Ryu +17 more
TL;DR: For the first time, a gate-all-around twin silicon nanowire transistor (TSNWFET) was successfully fabricated on bulk Si wafer using self-aligned damascene-gate process.
Patent
Non-volatile memory devices and method for forming the same
TL;DR: In this paper, a gate electrode is formed using a damascene process using a multi-gate structure and a method for forming the same of the present invention, and a charge storage layer, a tunneling insulating layer, blocking insulating layers and gate electrode layer are not attacked from etching in a process for forming gate electrode, thereby forming a nonvolatile memory device having good reliability.
Proceedings ArticleDOI
Floating Body DRAM Characteristics of Silicon-On-ONO (SOONO) Devices for System-on-Chip (SoC) Applications
Chang Woo Oh,Na-Young Kim,Ho Ju Song,Sung In Hong,Sung Hwan Kim,Yong Lack Choi,Hyun Jun Bae,Dong-uk Choi,Yong-seok Lee,Dong-Won Kim,Donggun Park,Byung-Il Ryu +11 more
TL;DR: In this paper, the authors demonstrate the DRAM characteristics of FD and PD SOONO devices successfully, together with the previously reported logic transistor and flash memory characteristics, and demonstrate the three key functions of SOO devices.
Proceedings ArticleDOI
A novel multi-channel field effect transistor (McFET) on bulk Si for high performance sub-80nm application
Sung-min Kim,Eun Jung Yoon,Hye Jin Jo,Ming Li,Chang Woo Oh,Sung-young Lee,Kyoung Hwan Yeo,Min Sang Kim,Sung Hwan Kim,Dong Uk Choe,Jeong Dong Choe,Sung Dae Suk,Dong-Won Kim,Donggun Park,Kinam Kim,Byung-Il Ryu +15 more
TL;DR: In this paper, the authors demonstrate a double FinFET on bulk Si wafer, named multi-channel field effect transistor (McFET), for the high performance 80nm 144M SRAM.
Journal ArticleDOI
High-Performance Twin Silicon Nanowire MOSFET (TSNWFET) on Bulk Si Wafer
Sung Dae Suk,Kyoung Hwan Yeo,Keun Hwi Cho,Ming Li,Yun Young Yeoh,Sung-young Lee,Sung-min Kim,Eun Jung Yoon,Min Sang Kim,Chang Woo Oh,Sung Hwan Kim,Dong-Won Kim,Dong-gun Park +12 more
TL;DR: A gate-all-around (GAA) twin silicon nanowire MOSFET (TSNWFET) with 5-nm-radius channels on a bulk Si wafer is successfully fabricated to achieve extremely high-drive currents of 2.37 mA/m for n-channel and 1.30 mA /m for p-channel TSNWFETs with mid-gap TiN metal gate.