M
Ming Qiao
Researcher at University of Electronic Science and Technology of China
Publications - 163
Citations - 1335
Ming Qiao is an academic researcher from University of Electronic Science and Technology of China. The author has contributed to research in topics: LDMOS & Breakdown voltage. The author has an hindex of 19, co-authored 135 publications receiving 1014 citations.
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Journal ArticleDOI
Ultralow Specific On-Resistance High-Voltage SOI Lateral MOSFET
TL;DR: An ultralow specific on-resistance (Ron,sp) integrable silicon-on-insulator (SOI) power lateral MOSFET is proposed in this paper.
Journal ArticleDOI
A 700- V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer
TL;DR: In this paper, a junction-isolated triple RESURF (JITR) LDMOS with high breakdown voltage (BV) and low specific on-resistance (R petertodd on,sp¯¯¯¯) is proposed.
Journal ArticleDOI
Novel Superjunction LDMOS (>950 V) With a Thin Layer SOI
Zhang Wentong,Zhan Zhenya,Yu Yang,Shikang Cheng,Gu Yan,Sen Zhang,Xiaorong Luo,Zehong Li,Ming Qiao,Zhaoji Li,Bo Zhang +10 more
TL;DR: A novel superjunction (SJ) lateral double-diffused MOSFET with a thin layer SOI combining the advantage of low specific on-resistance and the high breakdown voltage is proposed and experimentally demonstrated.
Proceedings ArticleDOI
High-Voltage Technology Based on Thin Layer SOI for Driving Plasma Display Panels
TL;DR: In this paper, a high-voltage thin layer SOI technology based on 1mum-thick silicon layer and 2mumthick buried oxide layer for driving color plasma display panels (PDP) has been developed.
Journal ArticleDOI
300-V High-Side Thin-Layer-SOI Field pLDMOS With Multiple Field Plates Based on Field Implant Technology
TL;DR: In this paper, a 300-V high-side thin-layer-SOI field pLDMOS adopting field implant (FI) technology and multiple field plates (MFPs) has been developed.