Mischa Thesberg

TL;DR: In this paper, the authors show that epitaxial calcium fluoride (CaF2), which can form a quasi van der Waals interface with 2D semiconductors, can serve as an ultrathin gate insulator for 2D devices.

TL;DR: In this paper, it was shown that even in the simple case of two and three-band semiconductors, it is possible to obtain substantial deviations of a factor of 2 (or in the case of a bipolar system with a Fermi level near the midgap, even orders of magnitude) from expectation.

TL;DR: In this paper, the authors review two of the most promising avenues to increase the power factor, namely modulation doping and electron energy filtering, and present a computational framework for analysis of these mechanisms for two example cases: low-dimensional gated Si nanowires (electrostatically achieved doping), and superlattices (energy filtering over potential barriers).

TL;DR: In this paper, the performance, reliability and thermal stability of CaF2-based 2D nanoelectronic devices were investigated. But, the performance and reliability of these devices were only observed for tunnel-thin gate insulators in 2D devices.

TL;DR: In this paper, the authors employ the nonequilibrium Green's function quantum transport method to calculate the electronic and thermoelectric coefficients of materials embedded with nanoinclusions, and show that the presence of nano-inclusions within a matrix material offers opportunities for weak energy filtering, significantly lower in comparison to superlattices, and thus only moderate power factor improvements.