M
Mohamed Al Khalfioui
Researcher at Centre national de la recherche scientifique
Publications - 26
Citations - 169
Mohamed Al Khalfioui is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Avalanche photodiode. The author has an hindex of 7, co-authored 18 publications receiving 133 citations. Previous affiliations of Mohamed Al Khalfioui include University of Nice Sophia Antipolis.
Papers
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Journal ArticleDOI
A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure
Jiyuan Zheng,Lai Wang,Xingzhao Wu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yi Luo,Yanjun Han,Jing Wang,Hongtao Li,Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang +16 more
TL;DR: In this article, the authors demonstrate a PMT-like APD based on GaN/AlN periodically stacked-structure (PSS), in which the electrons encounter a much less inter-valley scattering during transport than holes.
Journal ArticleDOI
A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure
Jiyuan Zheng,Lai Wang,Di Yang,Jiadong Yu,Xiao Meng,Yanxiong E,Chao Wu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yi Luo,Yan-jian Han,Jian Wang,Hongtao Li,Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang +20 more
TL;DR: In this paper, a GaN/AlN periodically-stacked-structure (PSS) APD with high gain without breakdown was demonstrated. And the stable gain can be determined by the periodicity of the GaN-AlN PSS.
Journal ArticleDOI
Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE
Stephanie Rennesson,Mathieu Leroux,Mohamed Al Khalfioui,M. Nemoz,Sébastien Chenot,Jean Massies,Ludovic Largeau,Ezgi Dogmus,Malek Zegaoui,Farid Medjdoub,Fabrice Semond +10 more
Journal ArticleDOI
Ultraviolet light emitting diodes using III-N quantum dots
Julien Brault,Samuel Matta,Samuel Matta,Thi Huong Ngo,Daniel Rosales,Mathieu Leroux,Benjamin Damilano,Mohamed Al Khalfioui,Mohamed Al Khalfioui,Florian Tendille,Sébastien Chenot,Philippe De Mierry,Jean Massies,Bernard Gil +13 more
TL;DR: In this paper, the structural and optical properties of different QD structures are investigated and compared, in particular, their propensity to get an emission in the UV range is analyzed in correlation with the influence of the internal electric field on their optical properties.
Journal ArticleDOI
Investigation of Al y Ga1? y N/Al0.5Ga0.5N quantum dot properties for the design of ultraviolet emitters
Julien Brault,Samuel Matta,Thi Huong Ngo,M. Korytov,Daniel Rosales,Benjamin Damilano,Mathieu Leroux,Philippe Vennéguès,Mohamed Al Khalfioui,Mohamed Al Khalfioui,Aimeric Courville,O. Tottereau,Jean Massies,Bernard Gil +13 more
TL;DR: In this paper, self-assembled Al y Ga 1− y N quantum dots (QDs), with y = 0 and 0.1, have been grown by molecular beam epitaxy on Al0.5Ga 0.5N(0001) oriented layers using sapphire substrates.