F
Farid Medjdoub
Researcher at Centre national de la recherche scientifique
Publications - 143
Citations - 2520
Farid Medjdoub is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: High-electron-mobility transistor & Gallium nitride. The author has an hindex of 23, co-authored 126 publications receiving 1943 citations. Previous affiliations of Farid Medjdoub include IMEC & Lille University of Science and Technology.
Papers
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Proceedings ArticleDOI
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
Farid Medjdoub,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Damien Ducatteau,Christophe Gaquiere,Nicolas Grandjean,Erhard Kohn +8 more
TL;DR: The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed in this paper, where the maximum output current density of more than 2 A/mm at room temperature and more than 3 A /mm at 77 K have been obtained even with sapphire substrates.
Journal ArticleDOI
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini,Carlo De Santi,Idriss Abid,Matteo Buffolo,Marcello Cioni,Riyaz Abdul Khadar,Luca Nela,Nicolo Zagni,Alessandro Chini,Farid Medjdoub,Gaudenzio Meneghesso,Giovanni Verzellesi,Enrico Zanoni,Elison Matioli +13 more
TL;DR: In this article, the authors describe the physics, technology, and reliability of GaN-based power devices, starting from a discussion of the main properties of the material, the characteristics of lateral and vertical GaN transistors are discussed in detail to provide guidance in this complex and interesting field.
Journal ArticleDOI
Barrier-Layer Scaling of InAlN/GaN HEMTs
Farid Medjdoub,Mohammed Alomari,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Nicolas Grandjean,Erhard Kohn +7 more
TL;DR: In this article, the characteristics of high-electron mobility transistors with barrier thickness between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition, were discussed.
Journal ArticleDOI
Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate
Farid Medjdoub,Joff Derluyn,Kai Cheng,Maarten Leys,Stefan Degroote,Denis Marcon,Domenica Visalli,M. Van Hove,Marianne Germain,Gustaaf Borghs +9 more
TL;DR: In this article, the authors used an in situ SiN cap layer for the first time to produce enhancement-mode transistors with high 2DEG density in combination with an extremely thin barrier layer leading to enhancementmode devices with state-of-the-art performance.
Proceedings ArticleDOI
A comprehensive reliability investigation of the voltage-, temperature- and device geometry-dependence of the gate degradation on state-of-the-art GaN-on-Si HEMTs
Denis Marcon,Thomas Kauerauf,Farid Medjdoub,J. Das,M. Van Hove,Puneet Srivastava,Kai Cheng,Maarten Leys,Robert Mertens,Stefaan Decoutere,Gaudenzio Meneghesso,Enrico Zanoni,Gustaaf Borghs +12 more
TL;DR: In this article, the gate degradation of GaN-based HEMTs is analyzed and the time-to-failure can be fitted best with a Weibull distribution by using the distribution parameters and a power law model.