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Samuel Matta
Researcher at Centre national de la recherche scientifique
Publications - 25
Citations - 247
Samuel Matta is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Quantum dot. The author has an hindex of 8, co-authored 23 publications receiving 197 citations. Previous affiliations of Samuel Matta include University of Montpellier.
Papers
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Journal ArticleDOI
A PMT-like high gain avalanche photodiode based on GaN/AlN periodically stacked structure
Jiyuan Zheng,Lai Wang,Xingzhao Wu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yi Luo,Yanjun Han,Jing Wang,Hongtao Li,Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang +16 more
TL;DR: In this article, the authors demonstrate a PMT-like APD based on GaN/AlN periodically stacked-structure (PSS), in which the electrons encounter a much less inter-valley scattering during transport than holes.
Journal ArticleDOI
Dislocation densities reduction in MBE-grown AlN thin films by high-temperature annealing
TL;DR: In this article, annealing at high temperatures allows the relaxation of the tensile strain in the AlN film due to the growth process, and the morphological properties of the films were determined by atomic force microscopy (AFM).
Journal ArticleDOI
A PMT-like high gain avalanche photodiode based on GaN/AlN periodical stacked structure
Jiyuan Zheng,Lai Wang,Di Yang,Jiadong Yu,Xiao Meng,Yanxiong E,Chao Wu,Zhibiao Hao,Changzheng Sun,Bing Xiong,Yi Luo,Yan-jian Han,Jian Wang,Hongtao Li,Julien Brault,Samuel Matta,Mohamed Al Khalfioui,Jianchang Yan,Tongbo Wei,Yun Zhang,Junxi Wang +20 more
TL;DR: In this paper, a GaN/AlN periodically-stacked-structure (PSS) APD with high gain without breakdown was demonstrated. And the stable gain can be determined by the periodicity of the GaN-AlN PSS.
Journal ArticleDOI
Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
Julien Brault,Samuel Matta,Thi Huong Ngo,Thi Huong Ngo,M. Al Khalfioui,Pierre Valvin,Mathieu Leroux,Benjamin Damilano,M. Korytov,Virginie Brandli,Philippe Vennéguès,Jean Massies,Bernard Gil +12 more
TL;DR: AlyGa1−yN quantum dots (QDs) have been grown by molecular beam epitaxy on AlxGa 1−xN (0001) using a 2-dimensional-3-dimensional growth mode transition that leads to the formation of QDs as mentioned in this paper.
Journal ArticleDOI
Ultraviolet light emitting diodes using III-N quantum dots
Julien Brault,Samuel Matta,Samuel Matta,Thi Huong Ngo,Daniel Rosales,Mathieu Leroux,Benjamin Damilano,Mohamed Al Khalfioui,Mohamed Al Khalfioui,Florian Tendille,Sébastien Chenot,Philippe De Mierry,Jean Massies,Bernard Gil +13 more
TL;DR: In this paper, the structural and optical properties of different QD structures are investigated and compared, in particular, their propensity to get an emission in the UV range is analyzed in correlation with the influence of the internal electric field on their optical properties.