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Mohamed Benyoucef

Researcher at University of Kassel

Publications -  95
Citations -  2287

Mohamed Benyoucef is an academic researcher from University of Kassel. The author has contributed to research in topics: Quantum dot & Photoluminescence. The author has an hindex of 25, co-authored 91 publications receiving 2040 citations. Previous affiliations of Mohamed Benyoucef include University of Bristol & University of Stuttgart.

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Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs / GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress

TL;DR: This work studies the effect of an external biaxial stress on the light emission of single InGaAs/GaAs(001) quantum dots placed onto piezoelectric actuators to provide a robust method to achieve color coincidence in the emission of X and XX, which is a prerequisite for the possible generation of entangled photon pairs via the recently proposed "time reordering" scheme.
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Telecom-wavelength (1.5 μm) single-photon emission from InP-based quantum dots

TL;DR: In this article, the authors demonstrate pronounced single-photon emission from InAs/AlGaInAs/InP quantum dots (QDs) at wavelengths above 1.5μm that are compatible with standard long-distance fiber communication.
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Self-Assembled Quantum Dot Molecules

TL;DR: A comprehensive overview of the development and current stage of the research on self-assembled QDMs composed of vertically or laterally aligned QDs is provided in this article, where the authors highlight some recent milestone works and point out the challenges and future directions in the field.
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Electrospray Ion Beam Deposition: Soft-Landing and Fragmentation of Functional Molecules at Solid Surfaces

TL;DR: It is found that homogeneous rhodamine films of defined composition can be produced at energies of 2-100 eV and the coverage is found to be proportional to the ion dose, and soft-landing is observed for energies up to 35 eV.
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On-chip Si/SiOx microtube refractometer

TL;DR: In this article, the authors fabricate rolled up microtubes consisting of Si/SiOx on Si substrate and analyze the possibility to use them as a refractometric sensor.