M
Muhammad Hassan Sayyad
Researcher at Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
Publications - 96
Citations - 1390
Muhammad Hassan Sayyad is an academic researcher from Ghulam Ishaq Khan Institute of Engineering Sciences and Technology. The author has contributed to research in topics: Thin film & Dye-sensitized solar cell. The author has an hindex of 20, co-authored 93 publications receiving 1200 citations. Previous affiliations of Muhammad Hassan Sayyad include Dublin City University.
Papers
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Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red
TL;DR: In this article, the currentvoltage characteristics of Al/methyl-red/Ag surface-type structure were investigated in air at room temperature, using three different methods: conventional forward bias I-V method, Cheung functions and modified Norde's function.
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Humidity-dependent characteristics of methyl-red thin film-based Ag/methyl-red/Ag surface-type cell
TL;DR: In this article, a 300-nm-thick film of methyl-red was deposited by a spin coater at an angular speed of 2000 revolutions per minute (RPM) on a glass substrate with preliminary deposited metal electrodes to form the Ag/methyl-red/Ag surface type cell.
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Extreme-ultraviolet studies with laser-produced plasmas
Eugene T. Kennedy,John Costello,Jean-Paul Mosnier,Attilio A. Cafolla,Martin Collins,L Kiernan,Ulrich Koeble,Muhammad Hassan Sayyad,Matthew Shaw,Bernd F. Sonntag,R. Barchewitz +10 more
TL;DR: In this paper, a multilaser multichannel spectrometer system was developed that allows a wide range of investigations of the interaction of extreme-ultraviolet (EUV) photons with matter in the form of free atoms or ions, e.g., in gases or plasmas or bound as in solids.
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Investigation of the electrical properties of a surface-type Al/NiPc/Ag Schottky diode using I- V and C- V characteristics
TL;DR: In this article, the electrical properties of Al/NiPc/Ag surface type Schottky diode fabricated by vacuum thermal evaporation have been investigated at room temperature in dark.
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Synthesis of Zn(II) 5,10,15,20-tetrakis(4′-isopropylphenyl) porphyrin and its use as a thin film sensor
Muhammad Hassan Sayyad,Muhammad Saleem,Khasan S. Karimov,Muhammad Yaseen,Mukhtar Ali,Kuan Yew Cheong,Ahmad F. Mohd Noor +6 more
TL;DR: In this paper, an organic semiconductor Zn(II) 5,10,15,20-tetrakis(4′-isopropylphenyl) porphyrin (ZnTIPP) was used as an active material in a surface type sensor.