Journal ArticleDOI
Extraction of electronic parameters of Schottky diode based on an organic semiconductor methyl-red
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TLDR
In this article, the currentvoltage characteristics of Al/methyl-red/Ag surface-type structure were investigated in air at room temperature, using three different methods: conventional forward bias I-V method, Cheung functions and modified Norde's function.Abstract:
The current–voltage (I–V) characteristics of Al/methyl-red/Ag surface-type structure were investigated in air at room temperature. The conventional forward bias I–V method, Cheung functions and modified Norde's function were used to extract the diode parameters including ideality factor, barrier height and series resistance. The parameter values obtained from these three different methods were found in good agreement.read more
Citations
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Journal ArticleDOI
The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
TL;DR: In this paper, the forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes with Zn doped polyvinyl alcohol (PVA:Zn) interfacial layer have been investigated in the wide temperature range of 80-400 K.
Journal ArticleDOI
Light induced charge transport property analysis of nanostructured ZnS based Schottky diode
Arka Dey,Somnath Middya,Rajkumar Jana,Mrinmay Das,Joydeep Datta,Animesh Layek,Partha Pratim Ray +6 more
TL;DR: In this paper, the authors investigated the light sensing behavior and also discussed the induced charge transport phenomena through the junction made by aluminium and hydrothermally derived zinc-sulfide (ZnS).
Journal ArticleDOI
Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique
Eyüp Fahri Keskenler,Murat Tomakin,Seydi Doğan,Güven Turgut,Serdar Aydın,Songül Duman,Bekir Gürbulak +6 more
TL;DR: In this paper, a polycrystalline ZnO thin film was obtained on the p-Si for the heterojunction diode fabrication by sol-gel method, and the texture of the film is hexagonal with a strong (0.0.2) preferred direction.
Journal ArticleDOI
Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range
TL;DR: In this paper, the forward bias currentvoltage (I-V) characteristics of Al/Rhodamine-101/n-GaAs structure have been investigated in the temperature range of 80-350 K.
Journal ArticleDOI
A Cd(ii)-based MOF as a photosensitive Schottky diode: experimental and theoretical studies.
Shibashis Halder,Arka Dey,Aradhita Bhattacharjee,Joaquín Ortega-Castro,Antonio Frontera,Partha Pratim Ray,Partha Roy +6 more
TL;DR: Different parameters have been analyzed and these indicate that 1 can be a promising candidate for light sensing electronic devices and has good sensitivity to the light source when switched on/off.
References
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Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Extraction of Schottky diode parameters from forward current-voltage characteristics
S. K. Cheung,N. W. Cheung +1 more
TL;DR: In this article, the forward current densityvoltage (J•V) characteristics of a Schottky diode were used to determine the ideality factor n, the barrier height φB, and the series resistance R of the diode with one single I•V measurement.
Journal ArticleDOI
Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
H C Card,E H Rhoderick +1 more
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI
A modified forward I‐V plot for Schottky diodes with high series resistance
TL;DR: In this article, it was shown that a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI•vs•V plot.
Journal ArticleDOI
Interpreting the nonideal reverse bias c-v characteristics and importance of the dependence of schottky-barrier height on applied voltage
TL;DR: In this paper, an attempt related to the charging behavior of interface states to the nonideal forward bias currentvoltage (I-V) and the reverse bias capacitance-voltage characteristics of AlnSi Schottky barrier diodes was made.