M
Muhammad Hassan Sayyad
Researcher at Ghulam Ishaq Khan Institute of Engineering Sciences and Technology
Publications - 96
Citations - 1390
Muhammad Hassan Sayyad is an academic researcher from Ghulam Ishaq Khan Institute of Engineering Sciences and Technology. The author has contributed to research in topics: Thin film & Dye-sensitized solar cell. The author has an hindex of 20, co-authored 93 publications receiving 1200 citations. Previous affiliations of Muhammad Hassan Sayyad include Dublin City University.
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Journal ArticleDOI
Enhancement of electronic and charge transport properties of NiPc by potassium-tetrasulpho group
Zubair Ahmad,Muhammad Hassan Sayyad,Fazal Wahab,Khaulah Sulaiman,Muhammad Shahid,Jamil Anwar Chaudry,Munawar Ali Munawar,Fakhra Aziz +7 more
TL;DR: A significant enhancement in the electronic properties of nickel phthalocyanine (NiPc) by attaching a potassium-tetrasulpho functional group to synthesize its water soluble derivative nickel was reported in this article.
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The 2p-subshell photoabsorption spectrum of Al+ in a laser-produced plasma
John Costello,D Evans,R B Hopkins,Eugene T. Kennedy,L Kiernan,M. W. D. Mansfield,Jean-Paul Mosnier,Muhammad Hassan Sayyad,B. F. Sonntag +8 more
TL;DR: In this paper, the authors have recorded the time-resolved photoabsorption spectra of aluminium plasmas in the 50-200 AA wavelength range using the dual laser produced plasma technique (DLPP).
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Spectroscopic and microscopic studies of thermally treated Vanadyl 2,9,16,23-tetraphenoxy-29H,31H-phthalocyanine thin films
Fakhra Aziz,Fakhra Aziz,Fakhra Aziz,Muhammad Hassan Sayyad,Zubair Ahmad,Khaulah Sulaiman,M. R. Muhammad,Kh. S. Karimov +7 more
TL;DR: In this paper, the structure, morphology and optical properties of Vanadyl 2,9,16,23-tetraphenoxy-29H,31H-phthalocyanine (VOPcPhO) pristine and annealed thin films for photo-devices application were reported.
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Extreme-UV photoabsorption spectrum of a laser-produced silicon plasma: evidence for metastable Si ions
TL;DR: In this article, the 2p-subshell excitation from metastable quartet states of the configuration was measured using a dual-laser-produced plasma technique and the experimental spectrum was compared to a spectrum synthesized with computed data from the Cowan suite of atomic structure codes.
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Absolute photoionization cross sections and resonance structure of doubly ionized silicon in the region of the 2 p − 1 threshold: Experiment and theory
Jean-Paul Mosnier,Muhammad Hassan Sayyad,Eugene T. Kennedy,Jean-Marc Bizau,Denis Cubaynes,F. J. Wuilleumier,J.-P. Champeaux,Christophe P. Blancard,R. Hari Varma,T. Banerjee,Pranawa C. Deshmukh,Steve Manson +11 more
TL;DR: In this article, the absolute photoionization cross section of doubly ionized silicon as a function of photon energy was obtained by merging a π 2 + π ion beam generated in an electron cyclotron resonance source with monochromatized synchrotron radiation from an undulator.