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Mukul Gupta

Researcher at Indian Department of Atomic Energy

Publications -  334
Citations -  3110

Mukul Gupta is an academic researcher from Indian Department of Atomic Energy. The author has contributed to research in topics: Thin film & Amorphous solid. The author has an hindex of 26, co-authored 278 publications receiving 2519 citations. Previous affiliations of Mukul Gupta include ETH Zurich & High Energy Materials Research Laboratory.

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A high resolution powder diffractometer using focusing optics

TL;DR: In this article, the authors describe the design, construction and performance of a new high resolution neutron powder diffractometer that has been installed at the Dhruva reactor, Trombay, India.
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Development of soft X-ray polarized light beamline on Indus-2 synchrotron radiation source

TL;DR: In this article, a soft x-ray beamline on a bending magnet source of Indus-2 storage ring (2.5 GeV) was developed and the beamline layout is based on a spherical grating monochromator.
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Nanocrystallization and amorphization induced by reactive nitrogen sputtering in iron and permalloy

TL;DR: In this article, a mechanism inducing nanocrystallization and amorphization in Fe and NiFe due to reactive nitrogen sputtering is discussed, and the surface, structural, and magnetic properties of the deposited films were studied using x-ray reflection and diffraction, transmission electron microscopy, polarized neutron reflectivity, and using a dc extraction magnetometer.
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AMOR: the time-of-flight neutron reflectometer at SINQ/PSI

TL;DR: The AMOR as mentioned in this paper was designed to perform reflectometry measurements in horizontal sample-plane geometry, which allows studying both solid-liquid and liquid-liquid interfaces using a pulsed cold neutron beam from the end position of the neutron guide.
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Spectroscopic ellipsometry characterization of amorphous and crystalline TiO2 thin films grown by atomic layer deposition at different temperatures

TL;DR: In this paper, the effect of growth temperature on the optical properties of TiO2 thin films of widely different structural and morphological characteristics were grown on Si (1.0) substrates using ALD by varying the substrate temperature (Ts) in a wide range (50 −°C −≤ −Ts −400°C).