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Mukul Gupta

Researcher at Indian Department of Atomic Energy

Publications -  334
Citations -  3110

Mukul Gupta is an academic researcher from Indian Department of Atomic Energy. The author has contributed to research in topics: Thin film & Amorphous solid. The author has an hindex of 26, co-authored 278 publications receiving 2519 citations. Previous affiliations of Mukul Gupta include ETH Zurich & High Energy Materials Research Laboratory.

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Rigid-band electronic structure of scandium nitride across the n -type to p -type carrier transition regime

TL;DR: In this article, a combination of spectroscopic techniques as well as first-principles density functional theory analysis is employed to show that the defect states in ScN are located inside the bands, which leaves behind the virgin ScN bandgap and the valence and conduction band edges that are important for electronic transport.
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Measurement of the Fermi potential of diamond-like carbon and other materials

TL;DR: In this article, the Fermi potential Vf of diamond-like carbon (DLC) coatings produced with laser-controlled vacuum arc deposition and that of diamond, Al, Si, Be, Cu, Fe and Ni was measured using two different methods, (i) transmission of slow neutrons through foils in a time-of-flight experiment and (ii) cold neutron reflectometry (CNR).
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Fe and N self-diffusion in non-magnetic Fe:N

TL;DR: In this paper, the diffusion of Fe and N in non-magnetic Fe:N has been studied using neutron reflectivity, and it was observed that N diffusion was slower compared to Fe while the atomic size of Fe is larger compared to N.
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On the coexistence of spin and lattice polarons in the La0.67−xEuxCa0.33MnO3 CMR system

TL;DR: The electrical and magnetic transport properties of the La 0.67− x Eu x Ca 0.33 MnO 3 system exhibit lowering of insulator to metal and paramagnetic to ferromagnetic transition temperature (T C ) with the increase of Eu concentration in addition to possessing CMR property.
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Effect of interface morphology on intermetallics formation upon annealing of Al–Ni multilayer

TL;DR: In this article, the authors studied the depth dependent structure and magnetization of as-deposited and annealed Al-Ni multilayer, with thickness ratio of Al:Ni equal to 1:2 giving an overall atomic stoichiometry of 1:3 for Al: Ni.