L
Ling Li
Researcher at Chinese Academy of Sciences
Publications - 219
Citations - 3564
Ling Li is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Resistive random-access memory & Transistor. The author has an hindex of 27, co-authored 207 publications receiving 2610 citations. Previous affiliations of Ling Li include Shanxi University & Center for Advanced Materials.
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Journal ArticleDOI
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
Haitao Sun,Qi Liu,Congfei Li,Shibing Long,Hangbing Lv,Chong Bi,Zongliang Huo,Ling Li,Ming Liu +8 more
TL;DR: This work provides clearly experimental evidence to deepen understanding of the mechanism for RS in oxide‐electrolyte‐based resistive switching memory, contributing to better control of the two RS behaviors to establish high‐performance emerging devices.
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Current Status and Opportunities of Organic Thin-Film Transistor Technologies
Xiaojun Guo,Yong Xu,Simon Dominic Ogier,Tse Nga Ng,Mario Caironi,Andrea Perinot,Ling Li,Jiaqing Zhao,Wei Tang,Radu A. Sporea,Ahmed Nejim,Jordi Carrabina,Paul Cain,Feng Yan +13 more
TL;DR: This paper provides a comprehensive review of the current status of OTFT technologies ranging from material, device, process, and integration, to design and system applications, and clarifies the real challenges behind to be addressed.
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Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
Hangbing Lv,Xiaoxin Xu,Hongtao Liu,Ruoyu Liu,Qi Liu,Writam Banerjee,Haitao Sun,Shibing Long,Ling Li,Ming Liu +9 more
TL;DR: The degradation of high resistance state behaves as the majority cases of the endurance failure of the HfO2 electrolyte based ECM cell, providing a basic understanding of the mechanisms of endurance and retention failure, and the relationship between them.
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Thermal crosstalk in 3-dimensional RRAM crossbar array
Pengxiao Sun,Pengxiao Sun,Nianduan Lu,Ling Li,Yingtao Li,Hong Wang,Hangbing Lv,Qi Liu,Shibing Long,Su Liu,Ming Liu +10 more
TL;DR: It is revealed that the reset process is dominated by transient thermal effect in 3D RRAM array, and possible methods for alleviating thermal crosstalk effect while further advancing the scaling potential are provided and verified by numerical simulation.
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Full imitation of synaptic metaplasticity based on memristor devices
Quantan Wu,Quantan Wu,Hong Wang,Qing Luo,Qing Luo,Writam Banerjee,Writam Banerjee,Jingchen Cao,Jingchen Cao,Xumeng Zhang,Xumeng Zhang,Facai Wu,Facai Wu,Qi Liu,Qi Liu,Ling Li,Ling Li,Ming Liu,Ming Liu +18 more
TL;DR: A method to imitate the metaplasticity inhibition of long-term potentiation (MILTP) for the first time based on memristors is proposed and verified by three different memristor devices including oxide-based resistive memory (OxRAM), interface switchingrandom access memory, and conductive bridging random access memory (CBRAM).