P
Pengxiao Sun
Researcher at Chinese Academy of Sciences
Publications - 32
Citations - 526
Pengxiao Sun is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Resistive random-access memory & Array data structure. The author has an hindex of 10, co-authored 31 publications receiving 450 citations. Previous affiliations of Pengxiao Sun include Lanzhou University & Center for Advanced Materials.
Papers
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Journal ArticleDOI
Thermal crosstalk in 3-dimensional RRAM crossbar array
Pengxiao Sun,Pengxiao Sun,Nianduan Lu,Ling Li,Yingtao Li,Hong Wang,Hangbing Lv,Qi Liu,Shibing Long,Su Liu,Ming Liu +10 more
TL;DR: It is revealed that the reset process is dominated by transient thermal effect in 3D RRAM array, and possible methods for alleviating thermal crosstalk effect while further advancing the scaling potential are provided and verified by numerical simulation.
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Thermoelectric Seebeck effect in oxide-based resistive switching memory
Ming Wang,Chong Bi,Ling Li,Shibing Long,Qi Liu,Hangbing Lv,Nianduan Lu,Pengxiao Sun,Ming Liu +8 more
TL;DR: It is shown that the small-polaron hopping model can well describe the electronic transport process for all resistance states, although the corresponding temperature-dependent resistance behaviours are contrary.
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Atomic View of Filament Growth in Electrochemical Memristive Elements
Hangbing Lv,Xiaoxin Xu,Pengxiao Sun,Hongtao Liu,Qing Luo,Qi Liu,Writam Banerjee,Haitao Sun,Shibing Long,Ling Li,Ming Liu +10 more
TL;DR: Refined programming scheme with real-time current regulation was proposed to study the detailed information on the filament growth, and a clear picture of filament growth from atomic view could be drawn to account for the resistance modulation of oxide electrolyte based electrochemical memristive elements.
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Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory
TL;DR: In this article, the geometry effect of conductive filament (CF) was investigated theoretically and the temperature and electric field distributions in the transient state in both one-dimensional and three-dimensional cases.
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Charge carrier hopping transport based on Marcus theory and variable-range hopping theory in organic semiconductors
TL;DR: In this article, the authors improved the A-H method to investigate the charge carrier hopping transport by introducing polaron effect and electric field based on the Marcus theory and variable-range hopping theory.