O
Osamu Minato
Researcher at Hitachi
Publications - 84
Citations - 1343
Osamu Minato is an academic researcher from Hitachi. The author has contributed to research in topics: CMOS & Static random-access memory. The author has an hindex of 22, co-authored 84 publications receiving 1337 citations.
Papers
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Journal ArticleDOI
Operation of bulk CMOS devices at very low temperatures
TL;DR: In this article, a low-temperature (77K, 4.2K) operation is proposed for bulk CMOS devices to be used in superfast VLSI applications.
Patent
Programmable semiconductor integrated circuitry including a programming semiconductor element
Toshiaki Masuhara,Osamu Minato,Katsuhiro Shimohigashi,Hiroo Masuda,Hideo Sunami,Yoshio Sakai,Yoshiaki Kamigaki,Eiji Takeda,Yoshimune Hagiwara +8 more
TL;DR: In this paper, a programmable semiconductor integrated circuitry including a circuit programming element is disclosed, which can be activated in a short-circuit mode by the irradiation of a laser or electron beam or by ion implantation so that it is converted from its original nonconductive state into a conductive or conductable state, thereby providing electrical connection between circuits and/or circuit elements of the integrated circuitry for a desired circuit programming such as circuit creation, circuit conversion or circuit substitution.
Journal ArticleDOI
A 15-ns 1-Mbit CMOS SRAM
Katsuro Sasaki,S. Hanamura,K. Ueda,T. Oono,Osamu Minato,Yoshio Sakai,Satoshi Meguro,M. Tsunematsu,T. Masuhara,M. Kubotera,H. Toyoshima +10 more
TL;DR: In this paper, a 1-Mbit CMOS static RAM (SRAM) with a typical address access time of 9 ns has been developed, consisting of a three-stage PMOS cross-coupled sense amplifier with a CMOS preamplifier.
Patent
Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device
TL;DR: In this paper, a metaloxide-semiconductor field effect transistor (MOSFET) is used to protect the gate and source of a high-speed operation, whereby the circuit is completed.
Patent
Method of making three dimensional semiconductor devices in selectively laser regrown polysilicon or amorphous silicon layers
Tamura Masao,Hirotsugu Kozuka,Yasuo Wada,Makoto Ohkura,Tamura Hiroshi,Takashi Tokuyama,Takahiro Okabe,Osamu Minato,Shinya Ohba +8 more
TL;DR: In this article, a semiconductor device having at least one lower resistance region formed in the single-crystalline semiconductor film which is so formed to continuously coat both a single-celline substrate and an insulating film formed on the surface of the substrate is described.