This paper provides an introductory overview of the Cell multiprocessor. Cell represents a revolutionary extension of conventional microprocessor architecture and organization. The paper discusses the history of the project, the program objectives and challenges, the disign concept, the architecture and programming models, and the implementation.

Introduction to the cell multiprocessor

Three-dimensional (3D) silicon integration of active devices with through-silicon vias (TSVs), thinned silicon, and silicon-to-silicon fine-pitch interconnections offers many product benefits. Advantages of these emerging 3D silicon integration technologies can include the following: power efficiency, performance enhancements, significant product miniaturization, cost reduction, and modular design for improved time to market. IBM research activities are aimed at providing design rules, structures, and processes that make 3D technology manufacturable for chips used in actual products on the basis of data from test-vehicle (i.e., prototype) design, fabrication, and characterization demonstrations. Three-dimensional integration can be applied to a wide range of interconnection densities (<10/cm2 to 108/cm2), requiring new architectures for product optimization and multiple options for fabrication. Demonstration test structures, which are designed, fabricated, and characterized, are used to generate experimental data, establish models and design guidelines, and help define processes for future product consideration. This paper 1) reviews technology integration from a historical perspective, 2) describes industry-wide progress in 3D technology with examples of TSV and silicon-silicon interconnection advancement over the last 10 years, 3) highlights 3D technology from IBM, including demonstration test vehicles used to develop ground rules, collect data, and evaluate reliability, and 4) provides examples of 3D emerging industry product applications that could create marketable systems.

Three-dimensional silicon integration

Rotary traveling-wave oscillators (RTWOs) represent a new transmission-line approach to gigahertz-rate clock generation. Using the inherently stable LC characteristics of on-chip VLSI interconnect, the clock distribution network becomes a low-impedance distributed oscillator. The RTWO operates by creating a rotating traveling wave within a closed-loop differential transmission line. Distributed CMOS inverters serve as both transmission-line amplifiers and latches to power the oscillation and ensure rotational lock. Load capacitance is absorbed into the transmission-line constants whereby energy is recirculated giving an adiabatic quality. Unusually for an LC oscillator, multiphase (360/spl deg/) square waves are produced directly. RTWO structures are compact and can be wired together to form rotary oscillator arrays (ROAs) to distribute a phase-locked clock over a large chip. The principle is scalable to very high clock frequencies. Issues related to interconnect and field coupling dominate the design process for RTWOs. Taking precautions to avoid unwanted signal couplings, the rise and fall times of 20 ps, suggested by simulation, may be realized at low power consumption. Experimental results of the 0.25-/spl mu/m CMOS test chip with 950-MHz and 3.4-GHz rings are presented, indicating 5,5-ps jitter and 34-dB power supply rejection ratio (PSRR). Design errors in the test chip precluded meaningful rise and fall time measurements.

/pdf/rotary-traveling-wave-oscillator-arrays-a-new-clock-3nk3bp89kq.pdf

Rotary traveling-wave oscillator arrays: a new clock technology

This paper reviews the design challenges that current and future processors must face, with stringent power limits, high-frequency targets, and the continuing system integration trends. This paper then describes the architecture, circuit design, and physical implementation of a first-generation Cell processor and the design techniques used to overcome the above challenges. A Cell processor consists of a 64-bit Power Architecture processor coupled with multiple synergistic processors, a flexible IO interface, and a memory interface controller that supports multiple operating systems including Linux. This multi-core SoC, implemented in 90-nm SOI technology, achieved a high clock rate by maximizing custom circuit design while maintaining reasonable complexity through design modularity and reuse.

Overview of the architecture, circuit design, and physical implementation of a first-generation cell processor

Silicon-on-insulator (SOI) CMOS offers a 20–35% performance gain over bulk CMOS. High-performance microprocessors using SOI CMOS have been commercially available since 1998. As the technology moves to the 0.13-µm generation, SOI is being used by more companies, and its application is spreading to lower-end microprocessors and SRAMs. In this paper, after giving a short history of SOI in IBM, we describe the reasons for performance improvement with SOI, and its scalability to the 0.1-µm generation and beyond. Some of the recent applications of SOI in high-end microprocessors and its upcoming uses in low-power, radio-frequency (rf) CMOS, embedded DRAM (EDRAM), and the integration of vertical SiGe bipolar devices on SOI are described. As we move to the 0.1-µm generation and beyond, SOI is expected to be the technology of choice for system-on-a-chip applications which require high-performance CMOS, low-power, embedded memory, and bipolar devices.

SOI technology for the GHz era

The fourth-generation POWER processor chip contains 170M transistors and includes 2 microprocessor cores, shared L2, directory for an off-chip L3, and all logic needed to interconnect multiple chips to form an SMP. It is implemented in a 0.18 /spl mu/m SOI technology, with 7 layers of Cu interconnect, and functions in systems at 1.1 GHz, and dissipates 115 W at 1.5 V.

Physical design of a fourth-generation POWER GHz microprocessor

The IBM POWER6™ microprocessor is a 790 million-transistor chip that runs at a clock frequency of greater than 4 GHz. The complexity and size of the POWER6 microprocessor, together with its high operating frequency, present a number of significant challenges. This paper describes the physical design and design methodology of the POWER6 processor. Emphasis is placed on aspects of the design methodology, technology, clock distribution, integration, chip analysis, power and performance, random logic macro (RLM), and design data management processes that enabled the design to be completed and the project goals to be met.

P. E. Dudley

Papers

Physical design of a fourth-generation POWER GHz microprocessor

IBM POWER6 microprocessor physical design and design methodology