Concern about the performance of wires wires in scaled technologies has led to research exploring other communication methods. This paper examines wire and gate delays as technologies migrate from 0.18-/spl mu/m to 0.035-/spl mu/m feature sizes to better understand the magnitude of the the wiring problem. Wires that shorten in length as technologies scale have delays that either track gate delays or grow slowly relative to gate delays. This result is good news since these "local" wires dominate chip wiring. Despite this scaling of local wire performance, computer-aided design (CAD) tools must still become move sophisticated in dealing with these wires. Under scaling, the total number of wires grows exponentially, so CAD tools will need to handle an ever-growing percentage of all the wires in order to keep designer workloads constant. Global wires present a more serious problem to designers. These are wires that do not scale in length since they communicate signals across the chip. The delay of these wives will remain constant if repeaters are used meaning that relative to gate delays, their delays scale upwards. These increased delays for global communication will drive architectures toward modular designs with explicit global latency mechanisms.

The future of wires

The various arguments for introducing optical interconnections to silicon CMOS chips are summarized, and the challenges for optical, optoelectronic, and integration technologies are discussed. Optics could solve many physical problems of interconnects, including precise clock distribution, system synchronization (allowing larger synchronous zones, both on-chip and between chips), bandwidth and density of long interconnections, and reduction of power dissipation. Optics may relieve a broad range of design problems, such as crosstalk, voltage isolation, wave reflection, impedence matching, and pin inductance. It may allow continued scaling of existing architectures and enable novel highly interconnected or high-bandwidth architectures. No physical breakthrough is required to implement dense optical interconnects to silicon chips, though substantial technological work remains. Cost is a significant barrier to practical introduction, though revolutionary approaches exist that might achieve economies of scale. An Appendix analyzes scaling of on-chop global electrical interconnects, including line inductance and the skin effect, both of which impose significant additional constraints on future interconnects.

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Rationale and challenges for optical interconnects to electronic chips

With the rapid developments in very large-scale integration (VLSI) technology, design and computer-aided design (CAD) techniques, at both the chip and package level, the operating frequencies are fast reaching the vicinity of gigahertz and switching times are getting to the subnanosecond levels. The ever increasing quest for high-speed applications is placing higher demands on interconnect performance and highlighted the previously negligible effects of interconnects such as ringing, signal delay, distortion, reflections, and crosstalk. In this review paper various high-speed interconnect effects are briefly discussed. In addition, recent advances in transmission line macromodeling techniques are presented. Also, simulation of high-speed interconnects using model-reduction-based algorithms is discussed in detail.

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Simulation of high-speed interconnects

Power systems for modern complementary metal-oxide-semiconductor (CMOS) technology are becoming harder to design. One design methodology is to identify a target impedance to be met across a broad frequency range and specify components to meet that impedance. The impedance versus frequency profiles of the power distribution system components including the voltage regulator module, bulk decoupling capacitors and high frequency ceramic capacitors are defined and reduced to simulation program with integrated circuit emphasis (SPICE) models. A sufficient number of capacitors are placed in parallel to meet the target impedance. Ceramic capacitor equivalent series resistance (ESR) and ESL are extremely important parameters in determining how many capacitors are required. SPICE models are then analyzed in the time domain to find the response to load transients.

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Power distribution system design methodology and capacitor selection for modern CMOS technology

Three-dimensional (3D) silicon integration of active devices with through-silicon vias (TSVs), thinned silicon, and silicon-to-silicon fine-pitch interconnections offers many product benefits. Advantages of these emerging 3D silicon integration technologies can include the following: power efficiency, performance enhancements, significant product miniaturization, cost reduction, and modular design for improved time to market. IBM research activities are aimed at providing design rules, structures, and processes that make 3D technology manufacturable for chips used in actual products on the basis of data from test-vehicle (i.e., prototype) design, fabrication, and characterization demonstrations. Three-dimensional integration can be applied to a wide range of interconnection densities (<10/cm2 to 108/cm2), requiring new architectures for product optimization and multiple options for fabrication. Demonstration test structures, which are designed, fabricated, and characterized, are used to generate experimental data, establish models and design guidelines, and help define processes for future product consideration. This paper 1) reviews technology integration from a historical perspective, 2) describes industry-wide progress in 3D technology with examples of TSV and silicon-silicon interconnection advancement over the last 10 years, 3) highlights 3D technology from IBM, including demonstration test vehicles used to develop ground rules, collect data, and evaluate reliability, and 4) provides examples of 3D emerging industry product applications that could create marketable systems.

Three-dimensional silicon integration

Short, medium, and long on-chip interconnections having linewidths of 0.45-52 /spl mu/m are analyzed in a five-metal-layer structure. We study capacitive coupling for short lines, inductive coupling for medium-length lines, inductance and resistance of the current return path in the power buses, and line resistive losses for the global wiring. Design guidelines and technology changes are proposed to achieve minimum delay and contain crosstalk for local and global wiring. Conditional expressions are given to determine when transmission-line effects are important for accurate delay and crosstalk prediction.

When are transmission-line effects important for on-chip interconnections?

This paper reviews the status of present day on-chip wiring design methodologies and understanding. A brief explanation is given of the fundamental transmission-line properties that should be considered for accurate prediction of crosstalk, common-mode noise and clock skew. The deficiencies of RC-circuit representation are highlighted and design guidelines are given for using modeling and simulation techniques that have been previously used for package interconnections. Such techniques are believed to teach designers how to make better use of available technologies and help them architect systems that operate with many-GHz clock rates.

On-chip wiring design challenges for gigahertz operation

Complementary metal-oxide-semiconductor (CMOS) microprocessors operating in the hundreds of megahertz create significant current deltas due to the variation in switching activity front clock cycle to clock cycle. In addition to the high-frequency voltage variations more commonly discussed, a lower frequency noise component is also produced that lasts from 50-200 ns which we refer to as mid-frequency noise. In this paper, we discuss the design of IBM's CMOS S/390 computer for control of mid-frequency noise. This machine has a 10-way multiprocessor on a 127 mm by 127 mm multichip module (MCM) on a FR4 board. The chips on the MCM cause a current step of tens of Amps in a few cycles that can be sustained for many cycles. The power distribution and decoupling capacitors must supply that current without disturbing the voltage level at the circuits. The design of the system power distribution and modeling and verification of mid-frequency noise in this system is presented.

Modeling, simulation, and measurement of mid-frequency simultaneous switching noise in computer systems

Short, medium and long on-chip interconnections having line widths of 0.45-52 /spl mu/m are analyzed in a five-metal-layer structure. We study capacitive coupling for short lines, inductive coupling for medium-length lines, inductance and resistance of the current return path in the power buses and line resistive losses for the global wiring. Design guidelines and technology changes are proposed to achieve minimum delay and contain crosstalk for local and global wiring. Conditional expressions are given to determine when transmission-line effects are important for accurate delay and crosstalk prediction.

Howard H. Smith

Papers

When are transmission-line effects important for on-chip interconnections?

On-chip wiring design challenges for gigahertz operation

Modeling, simulation, and measurement of mid-frequency simultaneous switching noise in computer systems

When are transmission-line effects important for on-chip interconnections

Chip integration methodology for the IBM S/390 G5 and G6 custom microprocessors