Showing papers by "Pavel Shiktorov published in 1997"
TL;DR: In this article, the authors present a survey on the theoretical modelling of the small-signal response and noise associated with velocity fluctuations in semiconductor high-field transport, and compare the results of different approaches.
Abstract: We present a survey on the theoretical modelling of the small-signal response and noise associated with velocity fluctuations in semiconductor high-field transport. Because of the high values of the applied electric field, current - voltage characteristics and electrical noise are found to deviate strongly from Ohm's law and Nyquist's relation respectively. Accordingly, in the case of homogeneous (bulk) structures the field and frequency dependence of the differential mobility, diffusivity and electronic noise temperature are investigated within a rigorous microscopic approach which solves exactly the appropriate kinetic equations through analytical and Monte Carlo techniques. Spectral functions in the frequency domain are obtained from their correspondent response and correlation functions in the time domain. The subject is also analysed within a balance-equation approach which enables us to obtain simple analytical expressions which can provide a direct microscopic interpretation and can be applied to device modelling. For validation purposes calculations are applied to the relevant case of holes in Si and electrons in GaAs. In the latter material the presence of negative differential conductivity (Gunn effect) leads to interesting behaviour of the small-signal response and noise spectra which are also investigated for the simplest prototype of non-homogeneous structures, that is the diode. The comparison between the different approaches so developed and between calculations and experiments is found to be quite good, thus providing a quantitative microscopic interpretation of the main features associated with small-signal response and fluctuations in semiconductors under high-field conditions.
41 citations
TL;DR: In this paper, a Monte Carlo simulator of the carrier motion self-consistently coupled with a Poisson solver is used for the analysis of electronic noise in semiconductor unipolar structures in the frequency range where 1/f noise can be neglected.
16 citations
13 citations
TL;DR: In this paper, it was shown that the spectral strength of the local noise source originally defined by Van Vliet et al. should be more generally replaced by the two-point spectral density of current fluctuations.
Abstract: We show that within the transfer impedance method, the spectral strength of the local noise source originally defined by Van Vliet et al. [J. Appl. Phys. 46, 1804 (1975)] should be more generally replaced by the two-point spectral density of current fluctuations. The theoretical arguments are further supported by numerical results for the voltage noise spectrum associated with conduction–current fluctuations in submicron n+nn+ structures. The above two-point spectral strength is, in general, a complex quantity related to fluctuations induced by velocity fluctuations only.
11 citations
TL;DR: In this article, an GaAs structure is proposed for microwave power generation in the terahertz frequency region, which allows one to realize within a mean free path distance a quasi-ballistic beam of hot electrons moving through a cold plasma and to use intervalley transfer to upper valleys as a strong mechanism for beam modulation.
Abstract: An GaAs structure is proposed for microwave power generation in the terahertz frequency region. The structure allows one both to realize within a mean free path distance a quasi-ballistic beam of hot electrons moving through a cold plasma and to use intervalley transfer to upper valleys as a strong mechanism for beam modulation. Kinetic energy is thus transferred from hot electrons to coherent plasma oscillations. The main features of such a generator are investigated by the Monte Carlo particle simulation.
4 citations
3 citations
TL;DR: In this article, the authors proposed a numerical procedure to calculate the hot-carrier thermal conductivity in bulk semiconductors based on combining Monte Carlo and hydrodynamic simulations of carrier transport in submicron inhomogeneous structures.
Abstract: We propose a novel numerical procedure to calculate the hot-carrier thermal conductivity in bulk semiconductors. The method is based on combining Monte Carlo and hydrodynamic simulations of carrier transport in submicron inhomogeneous structures. Application to a Si structure indicates a decrease over one order of magnitude of the thermal conductivity of electrons at electric fields over , in close agreement with recent results obtained within the correlation-function formalism.
2 citations
1 citations
01 Jan 1997
TL;DR: In this paper, the authors proposed a numerical procedure to calculate the hot-carrier thermal conductivity in bulk semiconductors based on combining Monte Carlo and hydrodynamic simulations of carrier transport in submicron inhomogeneous structures.
Abstract: We propose a novel numerical procedure to calculate the hot-carrier thermal conductivity in bulk semiconductors. The method is based on combining Monte Carlo and hydrodynamic simulations of carrier transport in submicron inhomogeneous structures. Application to a Si structure indicates a decrease over one order of magnitude of the thermal conductivity of electrons at electric fields over , in close agreement with recent results obtained within the correlation-function formalism.