Showing papers in "Microelectronics Journal in 1997"

TL;DR: In this article, the authors present a new mathematical method for the evaluation of the recorded transient, which is a detailed heat-flow map of the package structure, called the structure function.

TL;DR: In this article, the authors present materials for light-emitting diodes in the visible spectrum (400 700 nm) are semiconductors with bandgaps between 1.8 and 3.1 eV, with Eg (eV) = hν = 1240 /λ (nm).

TL;DR: A review of different microtechnologies for the fabrication of pH ion sensitive field effect transistor (ISFET) sensors is presented in this paper, where both front-side and back-side contacted devices are studied, in order to determine the compatibility of different processes, devices and materials with standard CMOS technologies.

TL;DR: The paper introduces the SISSSI electro-thermal simulation package which is a recent realization of the latter method, fully integrated into the Cadence Opus design framework.

TL;DR: The thermal resistance analysis by induced transient (TRAIT) method is a characterization technique which allows experimental evaluation of the total thermal resistance Rth of a semiconductor device and its assembling structure with a spatial resolution as mentioned in this paper.

TL;DR: In this paper, structural and optical properties of InAs layers grown on high index GaAs surfaces by molecular beam epitaxy are investigated in order to understand the formation and the self-organization of quantum dots (QDs) on novel index surfaces.

TL;DR: In this article, the basic principles of designing sensors on the base of Ge/GaAs heterostructures were developed and the possibility of manufacturing photodetectors and temperature, strain and Hall sensors was demonstrated.

TL;DR: The cleaved-edge overgrowth technique has been used for making quantum wires of the very highest quality as discussed by the authors, which has resulted in 250 × 250 A wide quantum wires with ballistic mean free paths exceeding 10 μm.

TL;DR: In this article, the possibilities and the main problems of thermography in VLSI circuits and power devices design and measurement are discussed, focusing on emissivity correction, noise and other measuring difficulties.

TL;DR: Anisotropic chemical etching of monocrystalline silicon in KOH aqueous solution is investigated in this article, where the atomic scale model proposed is based on the influence of the OH group on chemical bonds.

TL;DR: In this article, focused ion beam processing in Si-based microdevices and in sensors, including high-resolution patterning of YBaCuO superconducting Josephson junction devices, is discussed.

TL;DR: In this article, two groups of microstructurable glasses with a wide range of thermal expansion coefficients were developed, one may be microstructured by a modified LTV-lithographic technology, the other by using a NdYAG laser.

TL;DR: In this article, a microprobe X-ray microanalysis under conventional conditions (beam energy 10-30 keV) is presented, with sample masses from 1 to 100 pg.

TL;DR: A comparison shows the new network can provide as high a classification accuracy as the BPN and train in a time comparable to the CPN, whilst producing a considerably higher accuracy than the Cpn.

TL;DR: In this paper, it was shown that for every 10°C rise in junction temperature, the failure rate doubles and that performance and reliability are jointly constrained by the manner in which electronic components are cooled and how the overall system attributes are handled.

TL;DR: In this paper, a Monte Carlo simulator of the carrier motion self-consistently coupled with a Poisson solver is used for the analysis of electronic noise in semiconductor unipolar structures in the frequency range where 1/f noise can be neglected.

TL;DR: In this article, the authors present the design and characterization of a single poly EEPROM cell, optimized for embedded applications, and characterized by a good shrink potential, achieving a programming time of less than 1 msec and an endurance of more than 10 million cycles at 125°C.

TL;DR: In this article, a gradient direction sensor (GDS) is proposed for temperature measurement of a single heat source placed on the surface of a semiconductor device and the voltage values obtained give (after computing) information about the gradient direction of the measured quantity.

TL;DR: In this paper, the authors discuss the potential for improved performance and novel devices in the pseudomorphically strained InGaAs/AlGaA/GaAs and InGaAAs/InAlA/InP systems.

TL;DR: In this paper, the authors used infrared thermography as a two-dimensional method of measuring device temperatures and heat fields, compared with contacting thermometry or integration of thermally sensitive structures.

TL;DR: In this paper, the authors used self-ordering phenomena on crystal surfaces for the formation of QDs with properties satisfying device requirements on QD size, shape, uniformity and density.

TL;DR: In this article, the problem of heat generation and heat transport due to the absorption of the synchrotron beam energy in the X-ray mask and the resist during the lithographic process has been examined.

TL;DR: In this paper, a new generation method to implement CMOS floating resistors is presented, which depends on the linearization of the differential current of two matched NMOS transistors in two alternative configurations.

TL;DR: In this paper, Schottky diodes on sputtered a-SiC:H thin films for different metals (Mg,In,A1,Pd) were investigated.

TL;DR: In this paper, the surface structure and electronic properties of high-index molecular beam epitaxy (MBE)-prepared GaAs surfaces (112)A and B as well as (113) A and B were investigated in situ by low-energy electron diffraction and surface core level spectroscopy.

TL;DR: In this paper, the relationship between the arsenic incorporation kinetics and the surface morphology and Si doping behaviour in GaAs(110) films grown by molecular beam epitaxy (MBE) was studied.