Peide D. Ye

TL;DR: In this article, 20nm-80nm channel length (L ch ) InGaAs gate-all-around (GAA) nanowire MOSFETs with record high on-state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and width (W NW ) scaling down to 1.2nm and 20nm, respectively.

TL;DR: In this article, the authors examined the scaling and variability of transistor performance as a function of the number of parallel gate-all-around (GAA) transistors and found that the self-heating and NW-to-NW variability are reflected in novel properties of variability and reliability of GAA transistors that are neither anticipated nor observed in the corresponding planar technology.

TL;DR: This paper investigates the temperature dependent ambipolar operation of both electron and hole transport from 300 K to 20 K and provides the first systematic study on the low frequency noise mechanisms for both n-channel and p-channel BP transistors.

TL;DR: MgCaO demonstrates to be a promising dielectric for GaN MOS technology in serving as the surface passivation layer and reducing the gate leakage current while maintaining high RF performances for high-power applications.

TL;DR: In this article, the Raman response of the structures suggests that the interaction between a single-atomic tellurium chain and a carbon nanotube is weak, and that the inter-chain interaction becomes stronger as the number of chains increases.