다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

[신간의 별자리x] 우리/미술, 그리고 ‘슬픔의 박물관’

Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to ∼ 1,000 cm(2) V(-1) s(-1) obtained for a thickness of ∼ 10 nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.

Black phosphorus field-effect transistors

We introduce the 2D counterpart of layered black phosphorus, which we call phosphorene, as an unexplored p-type semiconducting material. Same as graphene and MoS2, single-layer phosphorene is flexible and can be mechanically exfoliated. We find phosphorene to be stable and, unlike graphene, to have an inherent, direct, and appreciable band gap. Our ab initio calculations indicate that the band gap is direct, depends on the number of layers and the in-layer strain, and is significantly larger than the bulk value of 0.31–0.36 eV. The observed photoluminescence peak of single-layer phosphorene in the visible optical range confirms that the band gap is larger than that of the bulk system. Our transport studies indicate a hole mobility that reflects the structural anisotropy of phosphorene and complements n-type MoS2. At room temperature, our few-layer phosphorene field-effect transistors with 1.0 μm channel length display a high on-current of 194 mA/mm, a high hole field-effect mobility of 286 cm2/V·s, and an...

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Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

In this work, we report the experimental demonstration of In₂O₃ 3 D transistors coated on fin structures and integrated circuits by a back end of line BEOL compatible atomic layer deposition ALD process High performance planar back gate In₂O₃ transistors with high mobility of 113 cm² V·s and high maximum drain current ( $I_{{D}}$ ) of 2.5 mA/μm are achieved by channel thickness engineering and postdeposition annealing. The high-performance ALD In₂O₃-based zero- $V_{{GS}}$ -load inverter is demonstrated with a maximum voltage gain of 38 V/V and a minimum supply voltage ( $V_{{DD}}$ ) down to 0.5 V. Top-gate indium oxide (In₂O₃) transistors by low-temperature ALD of both gate insulator and channel semiconductor are also demonstrated with $I_{{D}}$ of 570 μA/μm and low subthreshold slope (SS) down to 84.6 mV/decade. ALD In₂O₃ 3-D Fin transistors with the top-gate structure are then demonstrated, benefiting from the conformal deposition capability of ALD. These results suggest that ALD oxide semiconductors and devices have unique advantages and are promising toward BEOL-compatible monolithic 3-D integration for 3-D integrated circuits.

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

We report on comprehensive studies of Ge CMOS devices with the recessed channel and S/D fabricated on a Ge-on-insulator (GeOI) substrate. Both nFETs and pFETs with channel lengths (L ch ) from 500 to 20 nm, channel thicknesses (T ch ) from 90 to 15 nm, EOTs from 5 to 3 nm, and gate stacks with and without the post oxidation (PO) are investigated. Benefiting from the fully depleted ultra-thin body (FD-UTB) channel with a reasonable interface, a low sub-threshold slope (SS) of 95 mV/dec is obtained in a 60 nm L ch nFET and a record high I ON /I OFF ratio of 106 is realized in a 300 nm L ch nFET. The recessed contact strongly dependents on the recessed depth and optimized recessed depth significantly improves the Ge contacts.

Deep sub-100 nm Ge CMOS devices on Si with the recessed S/D and channel

Two-dimensional (2D) semiconductor, such as transition metal dichalcogenides (TMDs) and black phosphorus (BP), have been extensively studied for future transistor applications because of the atomic thin layered structure for excellent immunity to short channel effects. BP has been considered to be promising for future p-type channel material, because of its high hole mobility, up to 5000 cm2/Vs at room temperature demonstrated [1-6]. However, the on-current (I ON ) of transistors made of 2D semiconductors as channel materials haven't been demonstrated to be comparable to silicon metal-oxide-semiconductor field-effect transistor (MOSFETs).

Black phosphorus field-effect transistor with record drain current exceeding 1 A/mm

In this paper, 20nm - 80nm channel length (Lch) InGaAs gate- all-around (GAA) nanowire MOSFETs with record high on- state and off-state performance have been demonstrated by equivalent oxide thickness (EOT) and nanowire width (WNW) scaling down to 1.2nm and 20nm, respectively. SS and DIBL as low as 63mV/dec and 7mV/V have been demonstrated, indicating excellent interface quality and scalability. Highest ION = 0.63mA/{\mu}m and gm = 1.74mS/{\mu}m have also been achieved at VDD=0.5V, showing great promise of InGaAs GAA technology for 10nm and beyond high-speed low- power logic applications.

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

We demonstrate GaAs-based, metal-oxide-semiconductor field-effect transistors (MOSFETs) with excellent performance using an Al2O3 gate dielectric, deposited by atomic layer deposition (ALD). This achievement is very significant because Al2O3 possesses highly desirable physical and electrical properties as a gate dielectric. These MOSFET devices exhibit extremely low gate-leakage current, high transconductance, and high dielectric breakdown strength. A short-circuit, current-gain, cutoff frequency (fT) of 14 GHz and a maximum oscillation frequency (fmax) of 25.2 GHz have been achieved from a 0.65-µm gate-length device. The interface trap density (Dit) of Al2O3/GaAs is evaluated by the hysteresis of drain-source current, Ids, versus gate-source bias, Vgs, and the frequency dispersion of transconductance, gm.

Peide D. Ye

Papers

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Deep sub-100 nm Ge CMOS devices on Si with the recessed S/D and channel

Black phosphorus field-effect transistor with record drain current exceeding 1 A/mm

20-80nm Channel Length InGaAs Gate-all-around Nanowire MOSFETs with EOT=1.2nm and Lowest SS=63mV/dec

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition