Peter Chow

TL;DR: In this paper, a GaN p-i-n photovoltaic diode arrays were fabricated from epitaxial films deposited on sapphire by molecular beam epitaxy.

TL;DR: In this article, p-n junction light-emitting diodes fabricated from MgZnO∕Zn O∕p−AlGaN∕GaN triple heterostructures were simulated, revealing a strong hole confinement near the n−Zn o∕ p−AlgaN interface with a hole sheet density as large as 1.82×1013cm−2 for strained structures.

TL;DR: In this article, an all-electronic detection approach for biological sensing was proposed.Ungated AlGaN∕GaN high-electron-mobility transistor (HEMT) structures were functionalized in the gate region with aminopropyl silane.

TL;DR: In this article, an all-electronic detection approach for biological sensing was proposed.Ungated AlGaN∕GaN high-electron-mobility transistor (HEMT) structures were functionalized in the gate region with aminopropyl silane.

TL;DR: In this paper, a range of gate lengths (0.8-1.2μm) and widths (100-200 μm) were exposed to 40 MeV protons at fluences of 5×109 or 5×1010 cm−2.