L
Leonid Chernyak
Researcher at University of Central Florida
Publications - 134
Citations - 3222
Leonid Chernyak is an academic researcher from University of Central Florida. The author has contributed to research in topics: Carrier lifetime & Cathodoluminescence. The author has an hindex of 26, co-authored 128 publications receiving 2907 citations. Previous affiliations of Leonid Chernyak include Weizmann Institute of Science & Texas Tech University.
Papers
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Journal ArticleDOI
Electrically pumped waveguide lasing from ZnO nanowires
Sheng Chu,Guoping Wang,Weihang Zhou,Yuqing Lin,Leonid Chernyak,Jianze Zhao,Jianze Zhao,Jieying Kong,Lin Li,Jingjian Ren,Jianlin Liu +10 more
TL;DR: Electrically pumped Fabry-Perot type waveguide lasing from laser diodes that consist of Sb-doped p-type ZnO nanowires and n-typeZnO thin films are demonstrated, which exhibit highly stable lasing at room temperature, and can be modelled with finite-difference time-domain methods.
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MgZnO/AlGaN heterostructure light-emitting diodes
Andrei Osinsky,J. W. Dong,M. Z. Kauser,B. Hertog,Amir M. Dabiran,Peter Chow,S. J. Pearton,O. Lopatiuk,Leonid Chernyak +8 more
TL;DR: In this article, p-n junction light-emitting diodes fabricated from MgZnO∕Zn O∕p−AlGaN∕GaN triple heterostructures were simulated, revealing a strong hole confinement near the n−Zn o∕ p−AlgaN interface with a hole sheet density as large as 1.82×1013cm−2 for strained structures.
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Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals
David Cahen,Jean-Marc Gilet,Claus Schmitz,Leonid Chernyak,Konstantin Gartsman,Abram Jakubowicz +5 more
TL;DR: Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures, and possible causes for this effect, including electromigration and electric field-assisted defect reactions are suggested.
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Electron beam induced current measurements of minority carrier diffusion length in gallium nitride
TL;DR: In this article, the diffusion length of holes in n-type GaN is found to decrease from 3.4 to 1.2 μm in the doping range of 5×1015-2×1018 cm−3.
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High quality GaN–InGaN heterostructures grown on (111) silicon substrates
J. W. Yang,Caiying Sun,Q. Chen,M. Z. Anwar,M. Asif Khan,Sergey A. Nikishin,G. A. Seryogin,Andrei Osinsky,Leonid Chernyak,Henryk Temkin,Chimin Hu,Subhash Mahajan +11 more
TL;DR: In this paper, low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates was reported.