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William F. Koehl
Researcher at University of Chicago
Publications - 16
Citations - 2478
William F. Koehl is an academic researcher from University of Chicago. The author has contributed to research in topics: Qubit & Quantum information. The author has an hindex of 12, co-authored 16 publications receiving 2137 citations. Previous affiliations of William F. Koehl include University of California, Santa Barbara & Argonne National Laboratory.
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Journal ArticleDOI
Room temperature coherent control of defect spin qubits in silicon carbide
TL;DR: It is demonstrated that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin.
Journal ArticleDOI
Quantum computing with defects
Justin R. Weber,William F. Koehl,Joel B. Varley,Anderson Janotti,Bob B. Buckley,C. G. Van de Walle,David D. Awschalom +6 more
TL;DR: In this paper, the nitrogen-vacancy (NV-1) center is identified as a quantum-mechanical defect in diamond and a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems.
Journal ArticleDOI
Polytype control of spin qubits in silicon carbide
Abram L. Falk,Bob B. Buckley,Greg Calusine,William F. Koehl,Viatcheslav Dobrovitski,Alberto Politi,Christian A. Zorman,Philip X.-L. Feng,David D. Awschalom +8 more
TL;DR: It is shown that the 4H, 6H and 3C polytypes of SiC all host coherent and optically addressable defect spin states, including states in all three with room-temperature quantum coherence, which shows that crystal polymorphism can be a degree of freedom for engineering spin qubits.
Journal Article
Polytype control of spin qubits in silicon carbide
Journal ArticleDOI
Electrically and mechanically tunable electron spins in silicon carbide color centers.
Abram L. Falk,Abram L. Falk,Paul V. Klimov,Paul V. Klimov,Bob B. Buckley,Viktor Ivády,Viktor Ivády,Igor A. Abrikosov,Greg Calusine,William F. Koehl,William F. Koehl,Adam Gali,Adam Gali,David D. Awschalom,David D. Awschalom +14 more
TL;DR: It is shown that spin-spin interactions in 4H-SiC neutral divacancies give rise to spin states with a strong Stark effect, sub-10(-6) strain sensitivity, and highly spin-dependent photoluminescence with intensity contrasts of 15%-36%.