P
Philippe M. Fauchet
Researcher at Vanderbilt University
Publications - 494
Citations - 19231
Philippe M. Fauchet is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Silicon & Porous silicon. The author has an hindex of 60, co-authored 494 publications receiving 18686 citations. Previous affiliations of Philippe M. Fauchet include Rochester Institute of Technology & AT&T.
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Controlled Nucleation of Silicon Nanocrystals on a Periodic Template
TL;DR: In this article, the authors present a successful unification of standard lithographic approaches (top down), anisotropic etching of atomically smooth surfaces, and controlled crystallization of silicon quantum dots (bottom up) to produce silicon nanoclusters at desired locations.
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The Raman microprobe: A quantitative analytical tool to characterize laser-processed semiconductors
TL;DR: The Raman microprobe technique as mentioned in this paper can provide quantitative information on structure, composition, homogeneity, and stress, with 1-μm resolution, and is also a nondestructive technique that requires no special sample preparation and can be used in situ.
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Critical Review of Raman Spectroscopy as a Diagnostic Tool for Semiconductor Microcrystals
TL;DR: The second order Raman spectra are more sensitive to microcrystalline effects than first-order spectra as mentioned in this paper, and they offer the potential to measure crystal sizes greater than a few hundred angstroms but much work remains to be done to quantify the size dependence of the second order spectra.
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Generation and control of solitons and solitonlike pulses in a femtosecond ring dye laser.
TL;DR: The remarkable stability achieved allows for accurate characterization and control of solitons and solitonlike pulses in a passively mode-locked dye laser by adjustment of group-velocity dispersion, self-phase modulation, and spectral filtering.
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Photovoltaic device applications of porous microcrystalline silicon
Siddhartha P. Duttagupta,Philippe M. Fauchet,A. C. Ribes,H. F. Tiedje,Savvas Damaskinos,T.E Dixon,D.E. Brodie,Santosh K. Kurinec +7 more
TL;DR: In this article, the porosity of microcrystalline silicon films was varied from 20% to 60% by changing the anodization conditions, and the influence of porosity on the series resistance (R s ), the reflectance and the spectral response of the devices was studied.