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Philippe M. Fauchet

Researcher at Vanderbilt University

Publications -  494
Citations -  19231

Philippe M. Fauchet is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Silicon & Porous silicon. The author has an hindex of 60, co-authored 494 publications receiving 18686 citations. Previous affiliations of Philippe M. Fauchet include Rochester Institute of Technology & AT&T.

Papers
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Journal ArticleDOI

Carrier-carrier scattering within athermal distributions

TL;DR: In this paper, the density dependence of the initial scattering rate of free carriers within nearly monoenergetic distributions is studied both experimentally and theoretically in bulk GaAs, and it is shown that this carrier-carrier scattering rate increases significantly with the mean energy of the athermal distribution.
Book ChapterDOI

Ultrafast Spectroscopy of Very Dense and Hot Electron-Hole Plasmas in Crystalline and Amorphized Semiconductors

TL;DR: In this article, a femtosecond pulse was demonstrated to produce melting at the surface of silicon, where the carrier relaxation time is very short and hot (Te > 2000°K) plasma close to but below the melting phase transition in Si and GaAs.
Proceedings ArticleDOI

Raman Microscopy Of Semiconductor Films

TL;DR: In this paper, the results obtained with the Raman microprobe after laser processing or damage of semiconductor thin films were reported, and the spatial resolution in their experiments has allowed the observation of unsuspected modifications.
Journal ArticleDOI

Optical Properties of Cuprous Oxide Nanocrystals

TL;DR: In this paper, size restriction effects are manifest by a decrease in exciton luminescence and a 3.0 to 9.0 meV blue shift in 0,0 transition.