P
Philippe M. Fauchet
Researcher at Vanderbilt University
Publications - 494
Citations - 19231
Philippe M. Fauchet is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Silicon & Porous silicon. The author has an hindex of 60, co-authored 494 publications receiving 18686 citations. Previous affiliations of Philippe M. Fauchet include Rochester Institute of Technology & AT&T.
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Proceedings ArticleDOI
Label-Free Optical Biosensor using Silicon Two- Dimensional Photonic Crystal
M.R. Lee,Philippe M. Fauchet +1 more
TL;DR: In this paper, the authors report the design, fabrication and testing of a label-free optical biosensor consisting of a two-dimensional photonic crystal microcavity, with an extremely small internal surface of <100 mum2.
Journal ArticleDOI
Influence of silicon dioxide capping layers on pore characteristics in nanocrystalline silicon membranes.
TL;DR: This work systematically studied the influence of the silicon dioxide capping layers on pnc-Si membranes and found the decrease of the pore size and porosity is correlated with the increased roughness of the bottom oxide layer, which hinders nanocrystal nucleation and nanopore formation.
Proceedings ArticleDOI
Electroluminescence from Er doped SiO 2 /nc-Si multilayers under lateral carrier injection
TL;DR: In this paper, a light emitting p-i-n diodes consisting of Er-doped SiO 2 /nc-Si multilayers and a novel electrical pumping geometry are demonstrated in forward bias.
Proceedings ArticleDOI
Integrated sensor arrays with a configurable network interface for chemical and biological detection
Karl D. Hirschman,Marie Archer,Deoram Persaud,Vimalan Rajalingam,J.P. Clarkson,Jason Mann,Daniel Phillips,Wei Sun,Philippe M. Fauchet +8 more
TL;DR: Sensors based on macroporous silicon (M-PSI) have demonstrated the ability to detect the presence of certain chemical and biological materials and an electrical response to DNA hybridization and shown discrimination between binding and non-binding events.
Journal ArticleDOI
Electroluminescence and carrier transport in LEDs based on silicon-rich silicon oxide
TL;DR: In this article, a prototype alphanumeric 7-segment display with an isolated version of the LEDs and standard microelectronic processing techniques was fabricated using thermal oxidation of electrochemically etched c-Si.