Philippe M. Fauchet

TL;DR: In this paper, the erbium-doped porous silicon (PSi) structures have been studied for infrared photoluminescence (PL) and electroluminescent (EL) from the Erbium doped PSi structures and the absence of silicon band edge recombination, point defect, and dislocation luminescence bands suggest that the Ercomplex centers are the most efficient recombination sites.

TL;DR: In this article, a picosecond time-resolved pump and probe experiment has been performed on a thin a-Si/sub 0.5/Ge/sub sub-H film using the short optical pulses generated by the superconducting accelerator-pumped free-electron laser (FEL) at Stanford University.

TL;DR: In this paper, stable room-temperature electroluminescence at 154 μm from erbium-doped porous silicon devices under both forward and reverse bias conditions was demonstrated.

TL;DR: In this paper, the behavior of donor-acceptor recombination luminescence in quantum confined AgBr has been investigated, and it was shown that the DA lifetime increase with decreasing size is due to an increase in yield and lifetime of ''free'' excitons that slowly dissociate into ''close'' donoracceptor pairs.

TL;DR: In this article, materials and devices comprising physiologically acceptable silicon are provided, provided that they can be combined with a vector, including a viral vector, to form a vector for a vector.