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Philippe M. Fauchet

Researcher at Vanderbilt University

Publications -  494
Citations -  19231

Philippe M. Fauchet is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Silicon & Porous silicon. The author has an hindex of 60, co-authored 494 publications receiving 18686 citations. Previous affiliations of Philippe M. Fauchet include Rochester Institute of Technology & AT&T.

Papers
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Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon?

TL;DR: In this paper, a smart quantum confinement model for light-emitting porous silicon (LEpSi) was proposed, which allows for the existence of dangling bonds and strong infrared photoluminescence.
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Resonant tunneling in partially disordered silicon nanostructures

TL;DR: In this paper, a low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity.
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Luminescence Properties of Porous Silicon

TL;DR: In this article, a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI) was performed.
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Drude parameters of liquid silicon at the melting temperature

TL;DR: In this paper, the Drude parameters of liquid silicon at the melting temperature have been obtained from time-resolved reflectivity measurements at 1064, 532, and 355 nm following melting of an optically thick layer by a picosecond visible laser pulse.
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Time-resolved photoluminescence measurements in spark-processed blue and green emitting silicon

TL;DR: In this paper, time-resolved photoluminescence (PL) measurements on spark-processed Si ( sp -Si) are compared with those on dry-oxidized porous Si ( p -Si).