P
Philippe M. Fauchet
Researcher at Vanderbilt University
Publications - 494
Citations - 19231
Philippe M. Fauchet is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Silicon & Porous silicon. The author has an hindex of 60, co-authored 494 publications receiving 18686 citations. Previous affiliations of Philippe M. Fauchet include Rochester Institute of Technology & AT&T.
Papers
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Journal ArticleDOI
Can Oxidation and Other Treatments Help Us Understand the Nature of Light-Emitting Porous Silicon?
Philippe M. Fauchet,E. Ettedgui,A. Raisanen,Leonard J. Brillson,F. Seiferth,Santosh K. Kurinec,Yongli Gao,C. Peng,Leonid Tsybeskov +8 more
TL;DR: In this paper, a smart quantum confinement model for light-emitting porous silicon (LEpSi) was proposed, which allows for the existence of dangling bonds and strong infrared photoluminescence.
Journal ArticleDOI
Resonant tunneling in partially disordered silicon nanostructures
Leonid Tsybeskov,G. F. Grom,R. Krishnan,Laurent Montès,Philippe M. Fauchet,Dmitri Kovalev,J. Diener,Victor Yu. Timoshenko,F. Koch,John P. McCaffrey,J.-M. Baribeau,G. I. Sproule,David J. Lockwood,Yann-Michel Niquet,Christophe Delerue,G. Allan +15 more
TL;DR: In this paper, a low-temperature vertical carrier transport in layered structures comprised of Si nanocrystals separated in the growth direction by angstrom-thick SiO2 layers exhibits entirely unexpected, well-defined resonances in conductivity.
Journal ArticleDOI
Luminescence Properties of Porous Silicon
TL;DR: In this article, a systematic study of the influence of the anodization and etching conditions, and chemical and thermal treatments on the properties of light-emitting porous silicon (PSI) was performed.
Journal ArticleDOI
Drude parameters of liquid silicon at the melting temperature
K. D. Li,Philippe M. Fauchet +1 more
TL;DR: In this paper, the Drude parameters of liquid silicon at the melting temperature have been obtained from time-resolved reflectivity measurements at 1064, 532, and 355 nm following melting of an optically thick layer by a picosecond visible laser pulse.
Journal ArticleDOI
Time-resolved photoluminescence measurements in spark-processed blue and green emitting silicon
Rolf E. Hummel,M.H. Ludwig,S.-S. Chang,Philippe M. Fauchet,Ju. V. Vandyshev,Leonid Tsybeskov +5 more
TL;DR: In this paper, time-resolved photoluminescence (PL) measurements on spark-processed Si ( sp -Si) are compared with those on dry-oxidized porous Si ( p -Si).