Journal ArticleDOI
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.
Moshine Bouya,Nathalie Malbert,Nathalie Labat,Dominique Carisetti,Philippe Perdu,Jean-Claude Clement,Benoit Lambert,Michel Bonnet +7 more
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TLDR
The spectral analysis of the light emission in the visible near infrared spectrum shows a bell-shape with superimposed distinct emission peaks that suggest that the electroluminescence (EL) signal is due to the direct intraband of electrons and inelastic intraband transition of electrons due to scattering by charged centres.About:
This article is published in Microelectronics Reliability.The article was published on 2008-08-01. It has received 36 citations till now. The article focuses on the topics: Light emission & Electroluminescence.read more
Citations
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Journal ArticleDOI
Effect of GaN Channel Layer Thickness on DC and RF Performance of GaN HEMTs With Composite AlGaN/GaN Buffer
TL;DR: In this paper, the effects of GaN channel layer thickness on dc and RF performance of high-electron mobility transistors (HEMTs) with a state-of-the-art composite AlGaN/GaN (1/1 μm) buffer were systematically investigated.
Journal ArticleDOI
Field-dependent carrier trapping induced kink effect in AlGaN/GaN high electron mobility transistors
TL;DR: An anomalous kink effect featuring an abrupt recovery of drain current following current collapse is observed in the room-temperature output characteristics of AlGaN/GaN high electron mobility transistors.
Journal ArticleDOI
Investigation on the thermal behavior of microwave GaN HEMTs
Giovanni Crupi,Gustavo Avolio,Antonio Raffo,Pawel Barmuta,Dominique Schreurs,Alina Caddemi,Giorgio Vannini +6 more
TL;DR: In this paper, the authors investigated the temperature dependent behavior of a GaN HEMT under both small and large-signal conditions, and showed that thermal phenomena and traps are responsible for a marked self-heating effect, a slight threshold voltage shift, and an evident kink effect.
Journal ArticleDOI
Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiN x Layers
Marko J. Tadjer,Travis J. Anderson,Karl D. Hobart,Michael A. Mastro,Jennifer K. Hite,Joshua D. Caldwell,Yoosuf N. Picard,Fritz J. Kub,Charles R. Eddy +8 more
TL;DR: In this article, a comparative study of AlGaN/GaN high-electron-mobility transistor (HEMT) surface passivation using ex situ and in situ deposited SiN x is presented.
Journal ArticleDOI
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations
Mustapha Faqir,Mustapha Faqir,Mohsine Bouya,Nathalie Malbert,Nathalie Labat,Dominique Carisetti,Benoit Lambert,Giovanni Verzellesi,Fausto Fantini +8 more
TL;DR: Current collapse effects in AlGaN/GaN HEMTs are investigated by means of measurements and two-dimensional physical simulations and suggest that the kink effect can be explained by electron trapping into barrier traps and a consequent electron emission after a certain electric-field is reached.
References
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Journal ArticleDOI
Temperature dependence of the energy gap in semiconductors
TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
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The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
TL;DR: In this article, the authors show that the cause of current collapse is a charging up of a second virtual gate, physically located in the gate drain access region, thus acting as a negatively charged virtual gate.
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30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
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Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Steven C. Binari,K. Ikossi,J.A. Roussos,Walter Kruppa,Doewon Park,Harry B. Dietrich,Daniel D. Koleske,Alma Wickenden,R. L. Henry +8 more
TL;DR: In this article, the dc small-signal and microwave power output characteristics of AlGaN/GaN HEMTs are presented, and it is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer.
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A study on current collapse in AlGaN/GaN HEMTs induced by bias stress
TL;DR: In this paper, the authors investigated the role of the surface states between the gate and drain electrodes in current collapse in AlGaN/GaN HEMTs and showed that the current collapse was caused by the Si/sub 3/N/sub 4/4/ film passivation.