P
Pinshane Y. Huang
Researcher at University of Illinois at Urbana–Champaign
Publications - 88
Citations - 16983
Pinshane Y. Huang is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Graphene & Grain boundary. The author has an hindex of 32, co-authored 73 publications receiving 14351 citations. Previous affiliations of Pinshane Y. Huang include Cornell University & Columbia University.
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Journal ArticleDOI
One-dimensional electrical contact to a two-dimensional material.
Lei Wang,Inanc Meric,Pinshane Y. Huang,Qun Gao,Yuanda Gao,Helen Tran,Takashi Taniguchi,Kenji Watanabe,Luis M. Campos,David A. Muller,Jing Guo,Philip Kim,James Hone,Kenneth L. Shepard,Cory Dean,Cory Dean +15 more
TL;DR: In graphene heterostructures, the edge-contact geometry provides new design possibilities for multilayered structures of complimentary 2D materials, and enables high electronic performance, including low-temperature ballistic transport over distances longer than 15 micrometers, and room-tem temperature mobility comparable to the theoretical phonon-scattering limit.
Journal ArticleDOI
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
Arend M. van der Zande,Pinshane Y. Huang,Daniel Chenet,Timothy C. Berkelbach,Yumeng You,Gwan Hyoung Lee,Gwan Hyoung Lee,Tony F. Heinz,David R. Reichman,David A. Muller,James Hone +10 more
TL;DR: In this paper, single-crystal islands and polycrystals containing tilt and mirror twin grain boundaries are characterized, and the influence of the grain boundaries on the material properties of molybdenum disulphide is assessed.
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Grains and grain boundaries in single-layer graphene atomic patchwork quilts
Pinshane Y. Huang,Carlos Ruiz-Vargas,Arend M. van der Zande,William S. Whitney,Mark Levendorf,Joshua W. Kevek,Shivank Garg,Jonathan S. Alden,Caleb Hustedt,Ye Zhu,Jiwoong Park,Paul L. McEuen,David A. Muller +12 more
TL;DR: This work determines the location and identity of every atom at a grain boundary and finds that different grains stitch together predominantly through pentagon–heptagon pairs, and reveals an unexpectedly small and intricate patchwork of grains connected by tilt boundaries.
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High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
Kibum Kang,Saien Xie,Lujie Huang,Yimo Han,Pinshane Y. Huang,Kin Fai Mak,Cheol-Joo Kim,David A. Muller,Jiwoong Park +8 more
TL;DR: The preparation of high-mobility 4-inch wafer-scale films of monolayer molybdenum disulphide and tungsten disulPHide, grown directly on insulating SiO2 substrates, with excellent spatial homogeneity over the entire films are reported, a step towards the realization of atomically thin integrated circuitry.
Journal ArticleDOI
Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
Arend M. van der Zande,Pinshane Y. Huang,Daniel Chenet,Timothy C. Berkelbach,Youmeng You,Gwan Hyoung Lee,Tony F. Heinz,David R. Reichman,David A. Muller,James Hone +9 more
TL;DR: In this article, the microstructure of monolayer molybdenum disulfide has been studied and the authors show that triangular islands are single crystals and merge to form faceted tilt and mirror boundaries that are stitched together by lines of 8- and 4- membered rings.