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Pradipta K. Nayak
Researcher at King Abdullah University of Science and Technology
Publications - 42
Citations - 2023
Pradipta K. Nayak is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Thin-film transistor & Thin film. The author has an hindex of 20, co-authored 42 publications receiving 1715 citations. Previous affiliations of Pradipta K. Nayak include National Changhua University of Education & Indian Institute of Technology Bombay.
Papers
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Journal ArticleDOI
Recent Developments in p-Type Oxide Semiconductor Materials and Devices.
TL;DR: P-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market, and recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.
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Record mobility in transparent p-type tin monoxide films and devices by phase engineering.
J. A. Caraveo-Frescas,Pradipta K. Nayak,Hala Al-Jawhari,Danilo Bianchi Granato,Udo Schwingenschlögl,Husam N. Alshareef +5 more
TL;DR: It is shown that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility and this high mobility is realized by careful phase engineering.
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Spin-coated Ga-doped ZnO transparent conducting thin films for organic light-emitting diodes
Pradipta K. Nayak,Ji-Hoon Yang,Jinwoo Kim,Seungjun Chung,Jaewook Jeong,Changhee Lee,Yongtaek Hong +6 more
TL;DR: In this article, two corrections were made to the previously published version of this article: the radius of Zn should be read as 0.074 nm and Diethanolammine and its acronym DEA should be corrected to Monoethanolamine and MEA.
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High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric
TL;DR: In this paper, the authors reported high performance solution-deposited indium oxide thin-film transistors with field effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106.
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Thin Film Complementary Metal Oxide Semiconductor (CMOS) Device Using a Single-Step Deposition of the Channel Layer
Pradipta K. Nayak,J. A. Caraveo-Frescas,Zhenwei Wang,Mohamed N. Hedhili,Qingxiao Wang,Husam N. Alshareef +5 more
TL;DR: It is reported, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs).