R
R.K. Chanana
Researcher at Vanderbilt University
Publications - 20
Citations - 976
R.K. Chanana is an academic researcher from Vanderbilt University. The author has contributed to research in topics: Oxide & Passivation. The author has an hindex of 9, co-authored 20 publications receiving 909 citations. Previous affiliations of R.K. Chanana include Alpha Industries & Banaras Hindu University.
Papers
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Journal ArticleDOI
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
G.Y. Chung,Chin-Che Tin,John R. Williams,K. McDonald,R.K. Chanana,Robert A. Weller,Sokrates T. Pantelides,Leonard C. Feldman,O. W. Holland,M.K. Das,John W. Palmour +10 more
TL;DR: In this article, the authors demonstrate that the effective channel mobility of lateral, inversion-mode 4H-SiC MOSFETs is increased significantly after passivation of SiC/SiO/sub 2/ interface states near the conduction band edge by high temperature anneals in nitric oxide.
Journal ArticleDOI
Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures
R.K. Chanana,K. McDonald,M. Di Ventra,Sokrates T. Pantelides,Sokrates T. Pantelides,Leonard C. Feldman,Gilyong Chung,C. C. Tin,John R. Williams,Robert A. Weller +9 more
TL;DR: In this paper, the Fowler-Nordheim hole tunneling in p-4H-SiC metal-oxide-semiconductor capacitors has been confirmed and the effective mass for holes in the oxide is found to be in the range of 0.35m-0.52m, where m is the free electron mass.
Journal ArticleDOI
Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors
Gilyong Chung,Chin-Che Tin,John R. Williams,K. McDonald,M. Di Ventra,R.K. Chanana,Sokrates T. Pantelides,Sokrates T. Pantelides,Leonard C. Feldman,Robert A. Weller +9 more
TL;DR: In this paper, room temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) metal-oxide-semiconductor capacitors annealed in ammonia following oxide layer growth using standard wet oxidation techniques.
Journal ArticleDOI
Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide
John R. Williams,Gilyong Chung,Chin-Che Tin,K. McDonald,D. Farmer,R.K. Chanana,Robert A. Weller,Sokrates T. Pantelides,Sokrates T. Pantelides,O. W. Holland,Mrinal K. Das,Leonard C. Feldman +11 more
Journal ArticleDOI
Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation
Gilyong Chung,John R. Williams,Chin-Che Tin,K. McDonald,D. Farmer,R.K. Chanana,Sokrates T. Pantelides,Sokrates T. Pantelides,O. W. Holland,Leonard C. Feldman,Leonard C. Feldman +10 more
TL;DR: In this article, the authors characterized the interface state density and channel mobility for 4H-SiC MOSFETs fabricated with dry thermal oxides and subsequently passivated with nitric oxide.