抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

/pdf/self-assembled-monolayers-of-thiolates-on-metals-as-a-form-1neb0hj3k4.pdf

Self-assembled monolayers of thiolates on metals as a form of nanotechnology.

From molecules to crystal engineering: supramolecular isomerism and polymorphism in network solids.

2.2. Materials 929 2.3. Factors Influencing Charge Mobility 931 2.3.1. Molecular Packing 931 2.3.2. Disorder 932 2.3.3. Temperature 933 2.3.4. Electric Field 934 2.3.5. Impurities 934 2.3.6. Pressure 934 2.3.7. Charge-Carrier Density 934 2.3.8. Size/molecular Weight 935 3. The Charge-Transport Parameters 935 3.1. Electronic Coupling 936 3.1.1. The Energy-Splitting-in-Dimer Method 936 3.1.2. The Orthogonality Issue 937 3.1.3. Impact of the Site Energy 937 3.1.4. Electronic Coupling in Oligoacene Derivatives 938

Charge transport in organic semiconductors.

Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

https://science.sciencemag.org/content/sci/303/5664/1644.full.pdf

Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

We describe a method for contact printing metal patterns with nanometer features over large areas. This nanotransfer printing (nTP) technique relies on tailored surface chemistries to transfer metal films from the raised regions of a stamp to a substrate when these two elements are brought into intimate physical contact. The printing is purely additive, fast (<15 s contact time), and it occurs in a single processing step at ambient conditions. Features of varying dimensions, including sizes down to ∼100 nm, can be printed with edge resolution better than 15 nm. Electrical contacts and interconnects for high-performance organic transistors and complementary inverter circuits have been successfully fabricated using nTP.

Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics

We describe a patterning technique that uses self-assembled monolayers and other surface chemistries for guiding the transfer of material from relief features on a stamp to a substrate. This purely additive contact printing technique is capable of nanometer resolution. Pattern transfer is fast and it occurs at ambient conditions. We illustrate the versatility of this method by printing single-layer metal patterns with feature sizes from a few tens of microns to a few tens of nanometers. We also demonstrate its use for patterning, in a single step, metal/dielectric/metal multilayers for functional thin film capacitors on plastic substrates.

Interfacial Chemistries for Nanoscale Transfer Printing

A single-electron transistor scanning electrometer (SETSE)—a scanned probe microscope capable of mapping static electric fields and charges with 100-nanometer spatial resolution and a charge sensitivity of a small fraction of an electron—has been developed. The active sensing element of the SETSE, a single-electron transistor fabricated at the end of a sharp glass tip, is scanned in close proximity across the sample surface. Images of the surface electric fields of a GaAs/AlxGa1−xAs heterostructure sample show individual photo-ionized charge sites and fluctuations in the dopant and surface-charge distribution on a length scale of 100 nanometers. The SETSE has been used to image and measure depleted regions, local capacitance, band bending, and contact potentials at submicrometer length scales on the surface of this semiconductor sample.

https://science.sciencemag.org/content/sci/276/5312/579.full.pdf

Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges

We report the first direct observation of the cyclotron motion of new quasiparticles in a 2D electron system near 1/2 filling factor. Just as electrons in a metal geometrically resonate with a sound wave when a magnetic field is applied perpendicular to the sound propagation direction, near 1/2 filling factor we observe resonance of a surface sound wave with cyclotron orbits of charge carriers. The presence of a Fermi surface and geometric resonance of a sound wave with Chern-Simons gauge transformed fermions were explicitly predicted in a recent theory of the half filled Landau level

R. L. Willett

Papers

Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

Additive, nanoscale patterning of metal films with a stamp and a surface chemistry mediated transfer process: Applications in plastic electronics

Interfacial Chemistries for Nanoscale Transfer Printing

Scanning Single-Electron Transistor Microscopy: Imaging Individual Charges

Experimental demonstration of a Fermi surface at one-half filling of the lowest Landau level.