Graphene, the single-atom-thick form of carbon, holds promise for many applications, notably in electronics where it can complement or be integrated with silicon-based devices. Intense efforts have been devoted to develop a key enabling device, a broadband, fast optical modulator with a small device footprint. Now Liu et al. demonstrate an exciting new possibility for graphene in the area of on-chip optical communication: a graphene-based optical modulator integrated with a silicon chip. This new device relies on the electrical tuning of the Fermi level of the graphene sheet, and achieves modulation of guided light at frequencies over 1 gigahertz, together with a broad operating spectrum. At just 25 square micrometres in area, it is one of the smallest of its type. Integrated optical modulators with high modulation speed, small footprint and large optical bandwidth are poised to be the enabling devices for on-chip optical interconnects1,2. Semiconductor modulators have therefore been heavily researched over the past few years. However, the device footprint of silicon-based modulators is of the order of millimetres, owing to its weak electro-optical properties3. Germanium and compound semiconductors, on the other hand, face the major challenge of integration with existing silicon electronics and photonics platforms4,5,6. Integrating silicon modulators with high-quality-factor optical resonators increases the modulation strength, but these devices suffer from intrinsic narrow bandwidth and require sophisticated optical design; they also have stringent fabrication requirements and limited temperature tolerances7. Finding a complementary metal-oxide-semiconductor (CMOS)-compatible material with adequate modulation speed and strength has therefore become a task of not only scientific interest, but also industrial importance. Here we experimentally demonstrate a broadband, high-speed, waveguide-integrated electroabsorption modulator based on monolayer graphene. By electrically tuning the Fermi level of the graphene sheet, we demonstrate modulation of the guided light at frequencies over 1 GHz, together with a broad operation spectrum that ranges from 1.35 to 1.6 µm under ambient conditions. The high modulation efficiency of graphene results in an active device area of merely 25 µm2, which is among the smallest to date. This graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.

/pdf/a-graphene-based-broadband-optical-modulator-rvjxppjsy5.pdf

A graphene-based broadband optical modulator

Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.

Micrometre-scale silicon electro-optic modulator

Optical technology is poised to revolutionize short-reach interconnects. The leading candidate technology is silicon photonics, and the workhorse of such an interconnect is the optical modulator. Modulators have been improved dramatically in recent years, with a notable increase in bandwidth from the megahertz to the multigigahertz regime in just over half a decade. However, the demands of optical interconnects are significant, and many questions remain unanswered as to whether silicon can meet the required performance metrics. Minimizing metrics such as the device footprint and energy requirement per bit, while also maximizing bandwidth and modulation depth, is non-trivial. All of this must be achieved within an acceptable thermal tolerance and optical spectral width using CMOS-compatible fabrication processes. This Review discusses the techniques that have been (and will continue to be) used to implement silicon optical modulators, as well as providing an outlook for these devices and the candidate solutions of the future.

/pdf/silicon-optical-modulators-578o7o6kvr.pdf

Silicon optical modulators

An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

/pdf/silicon-microring-resonators-3fzr4lpxbh.pdf

Silicon microring resonators

The pace of the development of silicon photonics has quickened since 2004 due to investment by industry and government. Commercial state-of-the-art CMOS silicon-on-insulator (SOI) foundries are now being utilized in a crucial test of 1.55-mum monolithic optoelectronic (OE) integration, a test sponsored by the Defense Advanced Research Projects Agency (DARPA). The preliminary results indicate that the silicon photonics are truly CMOS compatible. RD however, lasing has not yet been attained. The new paradigm for the Si-based photonic and optoelectric integrated circuits is that these chip-scale networks, when suitably designed, will operate at a wavelength anywhere within the broad spectral range of 1.2-100 mum, with cryocooling needed in some cases

The Past, Present, and Future of Silicon Photonics

Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

With the growing use of optoelectronics in information technology, manipulating light is almost as important as manipulating electrons. Unfortunately silicon, workhorse of modern microelectronics, is next to useless in optical applications. There has been a massive effort to overcome silicon's inadequacies, and ways of coaxing silicon to handle light are under development but a key component — the laser — has been problematic. Last year a silicon laser was produced, but it involved metres of optical fibre. Now workers in Intel's research labs have come up with an all-silicon laser on a single chip. The device is compact and readily integrated with other silicon components. The possibility of light generation and/or amplification in silicon has attracted a great deal of attention1 for silicon-based optoelectronic applications owing to the potential for forming inexpensive, monolithic integrated optical components. Because of its indirect bandgap, bulk silicon shows very inefficient band-to-band radiative electron–hole recombination. Light emission in silicon has thus focused on the use of silicon engineered materials such as nanocrystals2,3,4,5, Si/SiO2 superlattices6, erbium-doped silicon-rich oxides7,8,9,10, surface-textured bulk silicon11 and Si/SiGe quantum cascade structures12. Stimulated Raman scattering (SRS) has recently been demonstrated as a mechanism to generate optical gain in planar silicon waveguide structures13,14,15,16,17,18,19,20,21. In fact, net optical gain in the range 2–11 dB due to SRS has been reported in centimetre-sized silicon waveguides using pulsed pumping18,19,20,21. Recently, a lasing experiment involving silicon as the gain medium by way of SRS was reported, where the ring laser cavity was formed by an 8-m-long optical fibre22. Here we report the experimental demonstration of Raman lasing in a compact, all-silicon, waveguide cavity on a single silicon chip. This demonstration represents an important step towards producing practical continuous-wave optical amplifiers and lasers that could be integrated with other optoelectronic components onto CMOS-compatible silicon chips.

An all-silicon Raman laser

We fabricated a low-loss (∼0.22dB∕cm) rib waveguide (WG) in silicon-on-insulator with a small effective core area of ∼1.57μm2 and measured the stimulated Raman scattering gain in the WG. We obtained 2.3dB Raman gain in a 4.8-cm-long S-shaped WG using a 1455nm pump laser with a cw power of 0.9W measured before the WG. In addition, we observed nonlinear dependence of Raman gain and optical propagation loss as a function of the pump power. Our study shows that this mainly is due to two-photon absorption (TPA) induced free carrier absorption in the silicon WG. We experimentally determined the TPA induced free carrier lifetime of 25ns, which agrees well with our modeling.

Raman gain and nonlinear optical absorption measurements in a low-loss silicon waveguide

Accurate three-dimensional (3D) imaging is essential for machines to map and interact with the physical world1,2 Although numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none has achieved the breadth of applicability and impact that digital image sensors have in the two-dimensional imaging world3–10 A large-scale two-dimensional array of coherent detector pixels operating as a light detection and ranging system could serve as a universal 3D imaging platform Such a system would offer high depth accuracy and immunity to interference from sunlight, as well as the ability to measure the velocity of moving objects directly11 Owing to difficulties in providing electrical and photonic connections to every pixel, previous systems have been restricted to fewer than 20 pixels12–15 Here we demonstrate the operation of a large-scale coherent detector array, consisting of 512 pixels, in a 3D imaging system Leveraging recent advances in the monolithic integration of photonic and electronic circuits, a dense array of optical heterodyne detectors is combined with an integrated electronic readout architecture, enabling straightforward scaling to arbitrarily large arrays Two-axis solid-state beam steering eliminates any trade-off between field of view and range Operating at the quantum noise limit16,17, our system achieves an accuracy of 31 millimetres at a distance of 75 metres when using only 4 milliwatts of light, an order of magnitude more accurate than existing solid-state systems at such ranges Future reductions of pixel size using state-of-the-art components could yield resolutions in excess of 20 megapixels for arrays the size of a consumer camera sensor This result paves the way for the development and proliferation of low-cost, compact and high-performance 3D imaging cameras that could be used in applications from robotics and autonomous navigation to augmented reality and healthcare A compact, high-performance silicon photonics-based light detection and ranging system for three-dimensional imaging is developed that should be amenable to low-cost mass manufacturing

A universal 3D imaging sensor on a silicon photonics platform

Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of applicability and impact that digital image sensors have achieved in the 2D imaging world. A large-scale two-dimensional array of coherent detector pixels operating as a light detection and ranging (LiDAR) system could serve as a universal 3D imaging platform. Such a system would offer high depth accuracy and immunity to interference from sunlight, as well as the ability to directly measure the velocity of moving objects. However, due to difficulties in providing electrical and photonic connections to every pixel, previous systems have been restricted to fewer than 20 pixels. Here, we demonstrate the first large-scale coherent detector array consisting of 512 ($32 \times 16$) pixels, and its operation in a 3D imaging system. Leveraging recent advances in the monolithic integration of photonic and electronic circuits, a dense array of optical heterodyne detectors is combined with an integrated electronic readout architecture, enabling straightforward scaling to arbitrarily large arrays. Meanwhile, two-axis solid-state beam steering eliminates any tradeoff between field of view and range. Operating at the quantum noise limit, our system achieves an accuracy of $3.1~\mathrm{mm}$ at a distance of 75 metres using only $4~\mathrm{mW}$ of light, an order of magnitude more accurate than existing solid-state systems at such ranges. Future reductions of pixel size using state-of-the-art components could yield resolutions in excess of 20 megapixels for arrays the size of a consumer camera sensor. This result paves the way for the development and proliferation of low cost, compact, and high performance 3D imaging cameras.

Remus Nicolaescu

Papers

A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

An all-silicon Raman laser

Raman gain and nonlinear optical absorption measurements in a low-loss silicon waveguide

A universal 3D imaging sensor on a silicon photonics platform

A universal 3D imaging sensor on a silicon photonics platform