R
René van Veldhoven
Researcher at Eindhoven University of Technology
Publications - 33
Citations - 866
René van Veldhoven is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Computer science & Geology. The author has an hindex of 8, co-authored 18 publications receiving 630 citations.
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Journal ArticleDOI
An introduction to InP-based generic integration technology
MK Meint Smit,Xaveer Leijtens,Huub Ambrosius,Erwin Bente,Jos J. G. M. van der Tol,Barry Smalbrugge,Tjibbe de Vries,E.J. Geluk,Jeroen Bolk,René van Veldhoven,LM Luc Augustin,P. J. A. Thijs,D. D'Agostino,Hadi Rabbani,K Katarzyna Lawniczuk,K Katarzyna Lawniczuk,Stanislaw Stopinski,Stanislaw Stopinski,Saeed Tahvili,Antonio Corradi,E Emil Kleijn,DO Dzmitry Dzibrou,M. Felicetti,E Elton Bitincka,V Valentina Moskalenko,Jing Zhao,Rui Santos,Giovanni Gilardi,Weiming Yao,Kevin A. Williams,Patty Stabile,P. I. Kuindersma,Josselin Pello,Srivathsa Bhat,Yuqing Jiao,Dominik Heiss,Gunther Roelkens,Gunther Roelkens,MJ Michael Wale,Paul Firth,Francisco M. Soares,Norbert Grote,Martin Schell,Helene Debregeas,Mohand Achouche,Jean-Louis Gentner,Arjen Bakker,Twan Korthorst,Dominic F. G. Gallagher,Andrew Dabbs,Andrea Melloni,Francesco Morichetti,Daniele Melati,Adrian Wonfor,Richard V. Penty,RG Ronald Broeke,Bob Musk,D.J. Robbins +57 more
TL;DR: The paper explains the concept of generic photonic integration technology using the technology developed by the COBRA research institute of TU Eindhoven as an example, and it describes the current status and prospects of generic InP-based integration technology.
Journal ArticleDOI
High‐Efficiency InP‐Based Photocathode for Hydrogen Production by Interface Energetics Design and Photon Management
Lu Gao,Y Yingchao Cui,René H. J. Vervuurt,Dick van Dam,René van Veldhoven,Jan P. Hofmann,Ageeth A. Bol,Jos E. M. Haverkort,Peter H. L. Notten,Peter H. L. Notten,Erik P. A. M. Bakkers,Erik P. A. M. Bakkers,Emiel J. M. Hensen +12 more
TL;DR: In this article, a three-pronged approach to obtain excellent performance of an InP-based photoelectrode for water reduction is presented, which includes a buried p-n+ junction, which shifts the valence band edge favorably with respect to the hydrogen redox potential.
Journal ArticleDOI
Integrated nano-optomechanical displacement sensor with ultrawide optical bandwidth
Tianran Liu,Francesco Pagliano,René van Veldhoven,Vadim Pogoretskiy,Yuqing Jiao,Andrea Fiore +5 more
TL;DR: A nanomechanical sensor with 80nm bandwidth, displacement imprecision of 45 fm/Hz 1/2 as well as a dynamic range greater than 30 nm with integrated photodetectors is presented.
Journal ArticleDOI
High-efficiency ultrasmall polarization converter in InP membrane.
Josselin Pello,Jos J. G. M. van der Tol,Shahram Keyvaninia,René van Veldhoven,Huub Ambrosius,Gunther Roelkens,MK Meint Smit +6 more
TL;DR: An ultrasmall (<10 μm length) polarization converter in InP membrane is fabricated and characterized and is found to be broadband and tolerant to dimension variations.
Journal ArticleDOI
Integrated near-infrared spectral sensing
Kaylee D. Hakkel,Maurangelo Petruzzella,Fang Ou,A. van Klinken,Francesco Pagliano,Tianran Li,René van Veldhoven,Andrea Fiore +7 more
TL;DR: In this article , the authors use an array of resonant-cavity-enhanced photodetectors, each featuring a distinct spectral response in the 850-1700 nm wavelength range.