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Véronique Cremers

Researcher at Ghent University

Publications -  9
Citations -  369

Véronique Cremers is an academic researcher from Ghent University. The author has contributed to research in topics: Atomic layer deposition & Coating. The author has an hindex of 6, co-authored 8 publications receiving 222 citations.

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Conformality in atomic layer deposition : current status overview of analysis and modelling

TL;DR: In this paper, the authors present a review of the current status of knowledge about the conformality of ALD processes, including an overview of relevant gas transport regimes, definitions of exposure and sticking probability, and a distinction between different ALD growth types observed in high aspect ratio structures.
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Review Article: Recommended reading list of early publications on atomic layer deposition—Outcome of the “Virtual Project on the History of ALD”

Esko Ahvenniemi, +62 more
TL;DR: The Virtual Project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of atomic layer deposition more transparent.
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Catalytic carpets: Pt@MIL-101@electrospun PCL, a surprisingly active and robust hydrogenation catalyst

TL;DR: In this paper, a poly-caprolactone (PCL) matrix is embedded in a polyamide polysilicon (PIL-101) matrix by means of electrospinning to create a "catalytic carpet" which is highly efficient and can be recovered within seconds after catalysis.
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Monte Carlo simulations of atomic layer deposition on 3D large surface area structures: Required precursor exposure for pillar- versus hole-type structures

TL;DR: In this article, the authors compared deposition on an infinite array of holes versus an infinite arrays of pillars and found that a well-spaced pillar geometry requires a 2-30 times smaller precursor exposure than a hole geometry and is therefore more ALD friendly.
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TiO2-coated luminescent porous silicon micro-particles as a promising system for nanomedicine

TL;DR: In this article, an inorganic TiO2 coating of pSi microparticles by atomic layer deposition (ALD) was used to stabilize the photoluminescence (PL) of the pSi particles in a biological buffer for more than three months without significant effect on their morphology.